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12210-70-7

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12210-70-7 Usage

General Description

Rubidium telluride is a chemical compound composed of rubidium and tellurium, with the chemical formula Rb2Te. It is a crystalline solid with a black color and is highly reactive. Rubidium telluride is commonly used in the production of infrared optical materials, as well as in the manufacturing of semiconductors and photoconductive films. It also has potential applications in the field of thermoelectric materials and as a catalyst in organic synthesis. Additionally, rubidium telluride has been studied for its unique electrical and optical properties, making it a subject of interest in the field of materials science and technology.

Check Digit Verification of cas no

The CAS Registry Mumber 12210-70-7 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,2,2,1 and 0 respectively; the second part has 2 digits, 7 and 0 respectively.
Calculate Digit Verification of CAS Registry Number 12210-70:
(7*1)+(6*2)+(5*2)+(4*1)+(3*0)+(2*7)+(1*0)=47
47 % 10 = 7
So 12210-70-7 is a valid CAS Registry Number.
InChI:InChI=1/2Rb.Te/rRb2Te/c1-3-2

12210-70-7Upstream product

12210-70-7Downstream Products

12210-70-7Relevant articles and documents

A novel two-dimensional mercury antimony telluride: Low temperature synthesis and characterization of RbHgSbTe3

Li, Jing,Chen, Zhen,Wang, Xunxie,Proserpio, Davide M.

, p. 28 - 33 (1997)

RbHgSbTe3 (I), a novel two-dimensional quaternary mercury antimony telluride, was synthesized via an unconventional low-temperature route. Single crystals of I were grown at 180°C from solvothermal reactions using ethylenediamine as solvent. The crystal structure of I was determined by X-ray diffraction methods. The structure belongs to the orthorhombic crystal system, space group Cmcm (no. 63), a = 4.590 (2) A, b = 15.745 (4) A, c = 11.737 (2) A, Z = 4. The crystal structure of this compound consists of two-dimensional layers of ∞2[HgSbTe3- ] with Rb+ counterions located between the layers. Optical studies performed on the powder samples of I suggested that the compound is a narrow-gap semiconductor. A band-gap of 0.2 e V was estimated from its diffuse reflectance spectrum.

The synthesis and crystal structure of K2UTe3

Sto?we, Klaus,Appel-Colbus, Stephan

, p. 1647 - 1651 (2008/10/08)

Syntheses of K2UTe3 were performed via polytelluride fluxes from K2Te3 and metallic uranium in the molar ratio 2:1 at 600 to 800 °C. Well-formed crystals were isolated by washing the reguli with liquid ammonia. One-phase powder samples of K2UTe3 are also available by reactions of stoichiometric mixtures of K2Te3 and uranium. K2Te3 was prepared in liquid ammonia from the elements using a glass apparatus specially designed for the synthesis of alkali metal chalcogenides. By x-ray structure analyses of single crystals we found K2UTe3 to crystallize monoclinic (space group C2/m, Z = 4) with the lattice parameters a = 800.41(3) pm, b = 1387.67(5) pm, c = 851.63(4) pm and β = 108.495(3)°. The crystal structure of the compound may be regarded as a stuffed AlCl3-type structure. The existence of an analogous compound Rb2UTe3 crystallizing isotypically to K2UTe3 has been shown by x-ray powder investigations.

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