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E-1,2-bis(3-(dodecylsulfanylthienyl-2))ethene is a chemical with a specific purpose. Lookchem provides you with multiple data and supplier information of this chemical.

1235883-28-9

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1235883-28-9 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 1235883-28-9 includes 10 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 7 digits, 1,2,3,5,8,8 and 3 respectively; the second part has 2 digits, 2 and 8 respectively.
Calculate Digit Verification of CAS Registry Number 1235883-28:
(9*1)+(8*2)+(7*3)+(6*5)+(5*8)+(4*8)+(3*3)+(2*2)+(1*8)=169
169 % 10 = 9
So 1235883-28-9 is a valid CAS Registry Number.

1235883-28-9Downstream Products

1235883-28-9Relevant academic research and scientific papers

Highly emissive and electrochemically stable thienylene vinylene oligomers and copolymers: An unusual effect of alkylsulfanyl substituents

Jeeva, Shehzad,Lukoyanova, Olena,Karas, Athan,Dadvand, Afshin,Rosei, Federico,Perepichka, Dmitrii F.

, p. 1661 - 1669 (2010)

The synthesis, unexpected efficient photoluminescence, and reversible electrochemical p- and n-doping of new conjugated thienylene vinylene materials functionalized with alkylsulfanyl substituents poly(trithienylene vinylene) (PTTV) and poly(dithienylvinyl-co-benzothiadiazole) (PDTVB) along with dithienylvinylene-based oligomers is reported. The materials are studied by thermal and X-ray diffraction analysis, optical spectroscopy, cyclic voltammetry, and spectroelectrochemistry. Organic field-effect transistors (OFETs) are fabricated with PTTV and PDTVB. The polymers, prepared by Stille polycondensation, exhibit good thermal stability and a photoluminescent quantum yield in the range 34%-68%. Low bandgaps (1.5-1.8 eV), estimated by optical and electrochemical measurements along with high stability of both redox states, suggest that these structures are promising materials for photovoltaic applications. OFETs fabricated with PDTVB reveal a hole mobility of 7 × 10-3 cm2 V-1 s-1 with on/off ratio 105, which are comparatively high values for completely amorphous polymer semiconductors.

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