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12401-56-8

12401-56-8

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12401-56-8 Usage

Chemical Properties

gray powder(s); rhomb, a=0.3677nm, b=1.455nm, c=0.3649nm; hardness 930 kgf/mm2; as 99.5% pure material, used as sputtering target to produce wear-resistant films and semiconducting films for use in integrated circuits [KIR80] [STR93] [CER91]

Uses

They have been used as ohmic contacts, Schottky barrier contacts, gate electrodes, local interconnects, and diffusion barriers. FeSi2 has become the remarkable source as high temperature thermoelectric material. It is also used as a powder in ceramic materials.

Check Digit Verification of cas no

The CAS Registry Mumber 12401-56-8 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,2,4,0 and 1 respectively; the second part has 2 digits, 5 and 6 respectively.
Calculate Digit Verification of CAS Registry Number 12401-56:
(7*1)+(6*2)+(5*4)+(4*0)+(3*1)+(2*5)+(1*6)=58
58 % 10 = 8
So 12401-56-8 is a valid CAS Registry Number.
InChI:InChI=1/Hf.S2/c;1-2/rHfS2/c1-3-2

12401-56-8 Well-known Company Product Price

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  • Alfa Aesar

  • (12564)  Hafnium silicide   

  • 12401-56-8

  • 2g

  • 485.0CNY

  • Detail

  • Alfa Aesar

  • (12564)  Hafnium silicide   

  • 12401-56-8

  • 10g

  • 1921.0CNY

  • Detail

12401-56-8SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 14, 2017

Revision Date: Aug 14, 2017

1.Identification

1.1 GHS Product identifier

Product name HAFNIUM SILICIDE

1.2 Other means of identification

Product number -
Other names hafnium disilicide

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:12401-56-8 SDS

12401-56-8Downstream Products

12401-56-8Related news

Photoelectron spectroscopy (XPS) and photoelectron diffraction (XPD) studies on the system HAFNIUM SILICIDE (cas 12401-56-8) and hafnium oxide on Si(1 0 0)08/11/2019

Continuous down-scaling of silicon based transistors results in device lengths of less than 100 nm. This requires a reduction of the gate dielectric thickness to less than 15Å which is not possible for SiO2 due to an increasing leakage current. One of the most promising candidates for a replacem...detailed

Morphology and growth of HAFNIUM SILICIDE (cas 12401-56-8) on Si(1 1 1)08/09/2019

The structure and growth of hafnium silicide on Si(1 1 1) were studied by scanning tunneling microscopy (STM). Hafnium was deposited by electron beam evaporation onto a clean Si(1 1 1) surface under UHV-conditions. The sample was heated in several steps up to 900°C. Upon annealing a growth of e...detailed

12401-56-8Relevant articles and documents

Hafnium silicide formation on Si(001)

Johnson-Steigelman,Brinck,Parihar,Lyman

, (2004)

The solid-state reaction of thick (～50 nm) and thin (～monolayer) films of Hf with cleaned and oxidized Si(001) substrates was investigated. Upon annealing to 1000 °C, films of HfSi2 were formed after reaction times that depended upon the surfac

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