124221-30-3 Usage
Uses
Used in Automotive Industry:
Disiloxane, 1,3-bis(2-bicyclo4.2.0octa-1,3,5-trien-3-ylethenyl)-1,1,3,3-tetramethyl-, homopolymer is used as a coating material for automotive components to protect them from wear, corrosion, and other environmental factors. Its high thermal stability and resistance to chemicals ensure the longevity and durability of the coated surfaces.
Used in Aerospace Industry:
In the aerospace industry, this homopolymer is utilized as a protective coating for aircraft components, such as engines and exterior surfaces. Its ability to withstand extreme temperatures and resist chemical degradation makes it an ideal choice for applications where reliability and performance are critical.
Used in Electronics Industry:
Disiloxane, 1,3-bis(2-bicyclo4.2.0octa-1,3,5-trien-3-ylethenyl)-1,1,3,3-tetramethyl-, homopolymer is employed as a coating material in the electronics industry to protect sensitive components from environmental factors, such as moisture, heat, and chemicals. Its excellent thermal stability and chemical resistance help maintain the performance and reliability of electronic devices.
Used as a Binder and Adhesive in Composite Materials Production:
This homopolymer is used as a binder and adhesive in the production of composite materials due to its strong bonding capabilities. Its high thermal stability and resistance to chemicals make it suitable for applications where the composite materials are exposed to harsh environments.
Used in Sealants and Adhesives:
Disiloxane, 1,3-bis(2-bicyclo4.2.0octa-1,3,5-trien-3-ylethenyl)-1,1,3,3-tetramethyl-, homopolymer is also a component in sealants and adhesives, where its strong bonding properties and resistance to environmental factors contribute to the overall performance and durability of the final product.
Check Digit Verification of cas no
The CAS Registry Mumber 124221-30-3 includes 9 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 6 digits, 1,2,4,2,2 and 1 respectively; the second part has 2 digits, 3 and 0 respectively.
Calculate Digit Verification of CAS Registry Number 124221-30:
(8*1)+(7*2)+(6*4)+(5*2)+(4*2)+(3*1)+(2*3)+(1*0)=73
73 % 10 = 3
So 124221-30-3 is a valid CAS Registry Number.
InChI:InChI=1/C8H14.H6OSi2/c1-2-4-8-6-5-7(8)3-1;2-1-3/h7-8H,1-6H2;2-3H3
124221-30-3Relevant articles and documents
A Ligand-Free Pt3Cluster Catalyzes the Markovnikov Hydrosilylation of Alkynes with up to 106Turnover Frequencies
Rivero-Crespo, Miguel A.,Leyva-Pérez, Antonio,Corma, Avelino
, p. 1702 - 1708 (2017/02/10)
The Pt-catalyzed hydrosilylation of alkynes is the procedure of choice to obtain vinylsilanes, and is claimed to be the most relevant application of Pt in organic synthesis. More than half a century after its discovery, only β-vinylsilanes (anti-Markovnikov addition) are obtained with simple Pt catalysts, whereas α-vinylsilanes (Markovnikov addition) remain elusive compounds. Here the catalysis of the Markovnikov hydrosilylation of terminal alkynes by Pt3clusters, in parts-per-million amounts, to give a wide variety of α-vinylsilanes in reasonable isolated yields and with turnover frequencies that can reach up to one million per hour is reported. Moreover, these α-vinylsilanes are reactive in well-stablished C?C bond-forming cascade reactions, in which the corresponding β-isomers are unreactive. Besides its efficiency and synthetic usefulness, this catalytic system is an excellent example of how the atom-by-atom aggregation of a catalytic metal leads to a different selectivity for a given reaction.
Preparation of vinyl silyl ethers and disiloxanes via the silyl-heck reaction of silyl ditriflates
Martin, Sara E. S.,Watson, Donald A.
supporting information, p. 13330 - 13333 (2013/09/24)
Vinyl silyl ethers and disiloxanes can now be prepared from aryl-substituted alkenes and related substrates using a silyl-Heck reaction. The reaction employs a commercially available catalyst system and mild conditions. This work represents a highly practical means of accessing diverse classes of vinyl silyl ether substrates in an efficient and direct manner with complete regiomeric and geometric selectivity.