12592-70-0Relevant academic research and scientific papers
System SrGa2S4-LaGaS3
Aliev,Shirinov
, p. 757 - 758 (2000)
Phase relations in the SrGa2S4-LaGaS3 system were studied by physicochemical analysis, and the SrGa2S4-LaGaS3 phase diagram was mapped out. The system was found to contain the quaternary compound SrLaGa3S7, which melts congruently at 1290 K and has a tetragonal structure. The composition ranges of the SrGa2S4- and SrLaGa3S7-based soliid solutions were determined.
Effect of co-doping of Ce3+ and alkaline metals on the photoluminescence in CaGa2S4 and SrGa2S 4 hosts
Hidaka, Chiharu,Miura, Kazutaka,Oikawa, Shinya,Takizawa, Takeo
, p. 2718 - 2722 (2006)
Ce3+ doped alkaline-earth thiogallates represented as M IIGa2S4 (MII= Ca, Sr, Ba) are known as blue phosphors with high brightness and good purity of color. However the Ce concentration is limited bel
Synthesis and luminescent properties of Eu-activated CaGa2S 4 and SrGa2S4
Aidaev
, p. 96 - 98 (2003)
SrS, CaS, SrGa2S4:Eu, and CaGa2S 4:Eu were prepared, and the luminescent properties of the latter two compounds were studied. It is shown that sufficiently pure SrS and CaS powders can be prepared via long-term
Ellipsometric at and below energy gap on polycrystalline calcium and strontium thiogallates
Mamedov, Nazim,Toyota, Hideyuki,Yasunaka, Atsushi,Shim, Yonggu,Kato, Ariyuki,Ashida, Atsushi,Iida, Seishi,Yamamoto, Nobuyuki
, p. 478 - 486 (2003)
The CaGa2S4 and SrGa2S4 with various grain sizes were studied over a wide range of photon energies at and below energy gap by using a spectroscopic phase modulated ellipsometer at room temperature. Complimentary, SEM and XRD techniques were applied. The pseudo-dielectric function of the samples with large grain sizes as compared to the light wavelength was found to be fairly reasonable. The energy gap for direct transitions in CaGa2S4 was estimated at ～4.10eV. For samples with small grain sizes (～100 nm), a splitting between principle angle and angle of minimal elliptic ratio, that could not be assigned to absorption was observed in the transient spectral range between diffraction and geometric optics.
A Method for the Clean Syntheses of Sulfides/Selenides: II. Ternary Sulfides/Selenides
Marsh, Paul J.,Davies, Dominic A.,Silver, Jack,Smith, David W.,Withnall,Vecht
, p. D89-D93 (2001)
The syntheses of MGa2S4 (where M = Ca, Sr, and Zn), CuMS2 (where M = In or Cr), Ba2ZnS3, and CuInSe2 by utilizing sulfur or selenium solutions in hydrazine monohydrate are reported. Scanning electron microscope studies of the morphology of the resulting materials prepared by this route are presented. The photoluminescence spectra of the phosphors SrGa2S4:Eu, SrGa2S4:Ce, ZnGa2S4:Mn, CaGa2S4:Eu, and Ba2ZnS3:Mn are displayed. The method is more environmentally friendly than traditional preparations (very little sulfur-based gases are formed). Additionally, it is a simple and rapid preparation, producing a good yield. The procedure facilitates the formation of ternary metal sulfides or selenides. It is further shown that for optimum performance of SrGa2S4:Eu, the phosphor needs to be fired in a reducing atmosphere to convert all of the Eu3- to Eu2+.
Phase equilibria in the SrS-Ga2S3 system
Kertman,Kraeva
, p. 1283 - 1286 (2010)
In the SrS-Ga2S3 system, there exist two individual compounds: SrGa2S4 (a = 2.084 nm, b = 2.050 nm, c = 1.220 nm; congruent melting at 1530 K) and Sr2Ga2S5 (a = 1.253 nm, b = 1.203 nm, c = 1.117 nm; peri- tectic melting at 1330 K); both are orthorhombic. We discovered a compound of composition Sr4Ga 2S7; this compound crystallizes in cubic system with the unit cell parameter a = 0.6008 nm, space group Pa3, and decomposes by a solid-phase reaction at 870 K. Eutectic compositions are 42 and 73 mol % Ga 2S3; eutectic melting temperatures are 1210 and 1170 K, respectively. The SrS solubility in ?-Ga2S3 at 1070 K reaches 4 mol %. Pleiades Publishing, Ltd., 2010.
Hot carrier type exchange in inorganic electroluminescent thin films
Tanaka, Katsu,Okamoto, Shinji
, (2006)
The authors have observed the hot carrier type (holes or electrons) exchange in rare-earth-ion-activated strontium thiogallate (Sr Ga2 S4) thin films by measuring the transient electroluminescent wave forms of the devices having a single insulating thin film. Measured wave forms revealed that the green electroluminescence of europium activated Sr Ga2 S4 thin film occurs due to hot hole excitation. In contrast, the blue electroluminescence of cerium activated Sr Ga2 S4 thin film occurs due to hot electron excitation. Hence, the hot carrier type is exchanged by the different rare-earth-ion doping.
Vaporization and Stability of Phases in the SrS-Ga2S3 System
Kapias, Piotr,Edwards, Jimmie G.
, p. 3649 - 3656 (2007/10/02)
Vaporization of solid samples whose initial composition was SrGa2S4 were studied in the temperature range 1256-1364 K by the simultaneous Knudsen- and torsion-effusion methods.The effusing vapor was taken to be composed of Ga2S(g) and S2(g) in equimolar a
