1312-41-0

Basic information

• Product Name: INDIUM ANTIMONIDE
• Synonyms: indiumcompd.withantimony(1:1);INDIUM ANTIMONIDE;Indium antimonide (99.99%-In) PURATREM;Indiumantimonideblackxtl;indium stibide;INDIUM ANTIMONIDE, 99.99+%;Indium antimonide, 99.5%;INDIUM ANTIMONIDE, 99.999%
• CAS NO: 1312-41-0
• Molecular Formula: InSb
• Molecular Weight: 236.58
• EINECS: 215-192-3
• Product Categories: Inorganics;Alloys;Materials Science;Metal and Ceramic Science;inorganic compound;Ceramic Science;Indium;Materials Science;Metal &Metal and Ceramic Science;Metals;New Products for Materials Research and Engineering
• Mol File: 1312-41-0.mol
• Article Data: 0

Chemical Properties

• Melting Point: 535°C
• Appearance: black/crystal
• Density: 5,76 g/cm3
• Water Solubility: Insoluble in water.
• Merck: 14,4948
• CAS DataBase Reference: INDIUM ANTIMONIDE(CAS DataBase Reference)
• NIST Chemistry Reference: INDIUM ANTIMONIDE(1312-41-0)
• EPA Substance Registry System: INDIUM ANTIMONIDE(1312-41-0)

Safety Data

• Hazard Codes: Xn,N
• Statements: 20/22-51/53
• Safety Statements: 61
• RIDADR: UN 1549 6.1/PG 3
• WGK Germany: 2
• RTECS: NL1105000
• TSCA: Yes
• HazardClass: 6.1
• PackingGroup: III
• Hazardous Substances Data: 1312-41-0(Hazardous Substances Data)

Usage

Chemical Properties

Crystalline solid.

Physical properties

Black cubic crystal; zincblende structure; density 5.775 g/cm3; melts at525°C; density of melt 6.48 g/mL; dielectric constant 15.9; insoluble in water.

Uses

Different sources of media describe the Uses of 1312-41-0 differently. You can refer to the following data:
1. Indium antimonide finds use in infrared detectors, including FLIR systems, thermal imaging cameras, infrared astronomy and in infrared homing missile guidance systems, in fast transistors. It is used in thermal image detectors using photo-electromagnetic detectors or photodiodes.
2. Crystal structure: Zinc blende structure, cubic
3. In semiconductor electronics. Grown p-n junctions(Indium(III) antimonide) have been made by doping a melt with an acceptor impurity such as zinc or cadmium, and dipping in an n-type crystal. Rate-grown junctions have also been made. Broad-area surface junctions have been produced by out-diffusing antimony in vacuum from the surface of an n-type crystal, producing a p-n junction just inside the surface. Also has photoconductive, photoelectromagnetic, and magnetoresistive properties. Useful as an infrared detector and filter, and in Hall effect devices.

Production Methods

Intermetallic semiconductors of indium are formed from group III and group V elements, requiring very high purity of the elements (0.1 ppm).

Preparation

Indium antimonide may be synthesized from its elements by fusion of sto-ichiometric amounts of indium and antimony at elevated temperatures in anevacuated, sealed ampule.

General Description

This product has been enhanced for energy efficiency.

Hazard

See indium; antimony.

InChI:InChI=1/In.Sb/rInSb/c1-2

Related news

Synthesis of Mn-doped INDIUM ANTIMONIDE (cas 1312-41-0) nanowires by multi-step depositions and annealing08/16/2019

A novel approach to the synthesis of Mn-doped InSb nanowires is demonstrated in this work. We first report on the preparation of InSb nanowires without high temperature treatment. Indium nanowires are grown by glance angle deposition and then coated with a layer of Sb. Single crystalline InSb na...detailed

Role of chemical potential and limitations of growth kinematics on stoichiometry of INDIUM ANTIMONIDE (cas 1312-41-0) nanowires08/15/2019

The conditions governing the growth of indium antimonide (InSb) nanowires by antimonidization of indium (In) droplets in a Chemical Vapor Deposition (CVD) system are examined. We report on factors that affect the InSb nanowire morphology and stoichiometry when growth is catalyzed by a low surfac...detailed