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13759-10-9

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13759-10-9 Usage

Chemical Properties

Different sources of media describe the Chemical Properties of 13759-10-9 differently. You can refer to the following data:
1. sublimed cotton-like fibrous clumps with 99.9% purity; white, fibrous mass or needles; rhomb, a=0.560 nm, b=0.553 nm, c=0.975 nm; decomposes in moist air to evolve H2S; burns if ignited by a flame [MER06] [CIC73] [CER91]
2. silicon disulfide, SiS2, white crystals, formed by heating amorphous silicon and sulfur, and then subliming, reactive with water.

Check Digit Verification of cas no

The CAS Registry Mumber 13759-10-9 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,3,7,5 and 9 respectively; the second part has 2 digits, 1 and 0 respectively.
Calculate Digit Verification of CAS Registry Number 13759-10:
(7*1)+(6*3)+(5*7)+(4*5)+(3*9)+(2*1)+(1*0)=109
109 % 10 = 9
So 13759-10-9 is a valid CAS Registry Number.
InChI:InChI=1/H2S2Si/c1-3-2/h3H2

13759-10-9SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 17, 2017

Revision Date: Aug 17, 2017

1.Identification

1.1 GHS Product identifier

Product name bis(sulfanylidene)silane

1.2 Other means of identification

Product number -
Other names dithioxosilane

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:13759-10-9 SDS

13759-10-9Synthetic route

carbon oxide sulfide
463-58-1

carbon oxide sulfide

silicon
7440-21-3

silicon

silicon disulfide
13759-10-9

silicon disulfide

Conditions
ConditionsYield
With H2S In neat (no solvent) Irradiation (UV/VIS); (Ar); H2S was passed over heated Si at about 1500 K, formed SiS and a mixt. of COS and Ar (200:1) was cocondensed about 30 min on a helium-cooled Cu surface and photolysed with a medium pressure Hg lamp (H2O filter); not isolated, detected IR spect.;
silicon monosulfide
12504-41-5

silicon monosulfide

carbon oxide sulfide
463-58-1

carbon oxide sulfide

silicon disulfide
13759-10-9

silicon disulfide

Conditions
ConditionsYield
In solid matrix byproducts: CO; other Radiation; 20-25 K, CH4 matrix, photolysis (10 min, Hg lamp); not isolated, followed by Raman spectroscopy;
silicon monosulfide
12504-41-5

silicon monosulfide

fluorine
7782-41-4

fluorine

A

silicon disulfide
13759-10-9

silicon disulfide

B

difluorosilanethione
110661-62-6

difluorosilanethione

C

F3SiSH
95665-02-4

F3SiSH

D

SiS*F2

SiS*F2

E

silicon tetrafluoride
7783-61-1

silicon tetrafluoride

Conditions
ConditionsYield
In solid matrix Ar matrix; IR-monitoring;
sulfur
7704-34-9

sulfur

silicon
7440-21-3

silicon

silicon disulfide
13759-10-9

silicon disulfide

Conditions
ConditionsYield
at 600℃; for 30h; Sealed tube;
silicon disulfide
13759-10-9

silicon disulfide

silicon
7440-21-3

silicon

silicon monosulphide

silicon monosulphide

Conditions
ConditionsYield
In gas heating mixt. of educts (1000°C, aluminium tube furnace, heating rate 2 °C/min, 5 Torr Ar); detd. by emission spectroscopy;
silicon disulfide
13759-10-9

silicon disulfide

A

disulfur
23550-45-0

disulfur

B

silicon monosulfide
12504-41-5

silicon monosulfide

Conditions
ConditionsYield
In neat (no solvent) heating (1300 K);
tetraphosphorus decasulfide
15857-57-5

tetraphosphorus decasulfide

silicon disulfide
13759-10-9

silicon disulfide

lithium sulfide

lithium sulfide

phosphorus pentoxide
16752-60-6

phosphorus pentoxide

Li10SiP2S11.1O0.9

Li10SiP2S11.1O0.9

Conditions
ConditionsYield
Stage #1: tetraphosphorus decasulfide; silicon disulfide; lithium sulfide; phosphorus pentoxide; silica gel for 1h; Milling; Glovebox; Inert atmosphere;
Stage #2: at 549.84℃; under 75007.5 Torr; for 48h; Glovebox; Inert atmosphere; Sealed tube;

13759-10-9Downstream Products

13759-10-9Related news

A fluorine bomb calorimetric determination of the standard molar enthalpy of formation of SILICON DISULFIDE (cas 13759-10-9) SiS2(cr) at the temperature 298.15 K. Enthalpies of dissociation of Si–S bonds09/29/2019

A synthesis of high-purity silicon disulfide SiS 2 is described, and the F.t.-Raman spectrum of the solid is reported for the first time. The standard massic energy of reaction of SiS 2 (cr) with fluorine was measured in a bomb calorimeter. The combustion reaction was shown to pr...detailed

From Silylone to an Isolable Monomeric SILICON DISULFIDE (cas 13759-10-9) Complex10/01/2019

The synthesis and characterization of the first bis‐N‐heterocyclic carbene stabilized monomeric silicon disulfide (bis‐NHC)SiS22 (bis‐NHC=H2C[{NC(H)C(H)N(Dipp)}C:]2, Dipp=2,6‐iPr2C6H3) is reported. Compound 2 is prepared in 89 % yield from the reaction of the zero‐valent silicon complex (′...detailed

13759-10-9Relevant articles and documents

Matrix IR Spectrum and ab Initio SCF Calculations of Molecular SiS2

Schnoeckel, Hansgeorg,Koeppe, Ralf

, p. 4583 - 4586 (1989)

In solid argon molecular SiS2 is generated by a reaction of SiS with S atoms.The antisymmetric stretching vibration νas(SiS) is observed at 918 cm-1.Bonding and structure (force constants from experimentally observed frequencies and results from ab initio SCF calculations) of SiS2 are compared with that of the similar molecules: CO, CS, CO2, COS, CS2, SiO, SiS, SiO2, and SiOS.

Difluorosilanethione F2Si=S by flash vacuum thermolysis of (F3Si)2S and by reaction of SiS with F2 - Matrix studies and ab initio calculations

Beckers, Helmut,Breidung, Ju?rgen,Bu?rger, Hans,Ko?ppe, Ralf,Ko?tting, Carsten,Sander, Wolfram,Schno?ckel, Hansgeorg,Thiel, Walter

, p. 2013 - 2019 (2007/10/03)

Difluorosilanethione F2Si=S (1) has been synthesized by Flash Vacuum Pyrolysis of (F3Si)2S at ≥ 500 °C and trapped in an Ar matrix. Furthermore, 1 has been obtained by codeposition of SiS and F2/Ar and by pyrolysis of a matrix-isolated SiS2-XeF2 complex under cryogenic conditions. All six vibrational fundamentals of 1 have been observed in the matrix IR spectrum. Ab initio calculations at the MP2 and CCSD(T) levels using large basis sets have been performed. These calculations have guided the detection of 1 and the vibrational assignment. The best estimate of the structure of 1 with C(2v) symmetry is: r(Si=S) 191.1(1) pm, r(SiF) 156.1(1) pm, angle(FSiF) 103.3(2)°.

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