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1378502-52-3

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1378502-52-3 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 1378502-52-3 includes 10 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 7 digits, 1,3,7,8,5,0 and 2 respectively; the second part has 2 digits, 5 and 2 respectively.
Calculate Digit Verification of CAS Registry Number 1378502-52:
(9*1)+(8*3)+(7*7)+(6*8)+(5*5)+(4*0)+(3*2)+(2*5)+(1*2)=173
173 % 10 = 3
So 1378502-52-3 is a valid CAS Registry Number.

1378502-52-3Downstream Products

1378502-52-3Relevant academic research and scientific papers

Efficient non-doped near infrared organic light-emitting devices based on fluorophores with aggregation-induced emission enhancement

Du, Xiaobo,Qi, Ji,Zhang, Zhiqiang,Ma, Dongge,Wang, Zhi Y.

experimental part, p. 2178 - 2185 (2012/09/07)

A family of donor-acceptor-donor (D-A-D) type near-infrared (NIR) fluorophores containing rigid nonplanar conjugated tetraphenylethene (TPE) moieties was designed and synthesized through Stille coupling reactions with electron-deficient [1,2,5]thiadiazolo[3,4-g]quinoxaline (QTD) or benzo[1,2-c;4,5-c′]bis[1,2,5]thiadiazole (BBTD) as acceptors. The absorption, fluorescence, and electrochemical properties were studied. These compounds exhibited good aggregation-induced emission enhancement (AIEE) property, as a result of the twisted TPE units, which restrict the intramolecular rotation and reduce the π-π stacking. Photoluminescence of these chromophores ranges from 600 to 1100 nm, and their HOMO-LUMO gaps are between 1.85 and 1.50 eV. Non-doped organic light-emitting diodes (OLEDs) based on these fluorophores were made and exhibited EL emission spectra peaking from 706 to 864 nm. The external quantum efficiency (EQE) of these devices ranged from 0.89% to 0.20% and remained fairly constant over a range of current density of 100-300 mA cm-2. The device with the highest solid fluorescence efficiency emitter 1a shows the best performance with a maximum radiance of 2917 mW Sr-1 m-2 and EQE of 0.89%. A contrast between nondoped and doped OLEDs with these materials confirms that AIEE compounds are suitable for fabricate efficient nondoped NIR OLEDs.

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