138529-84-7

Basic information

• Product Name: BIS(T-BUTYLSULFONYL)DIAZOMETHANE
• Synonyms: BIS(T-BUTYLSULFONYL)DIAZOMETHANE;Bis(t-butylsulfony)diazomethane;BIS(TERTBUTYLSULFONYL) DIAZOMETHANE
• CAS NO: 138529-84-7
• Molecular Formula: C9H18N2O4S2
• Molecular Weight: 282.38
• Mol File: 138529-84-7.mol
• Article Data: 6

Chemical Properties

• Appearance: /
• CAS DataBase Reference: BIS(T-BUTYLSULFONYL)DIAZOMETHANE(CAS DataBase Reference)
• NIST Chemistry Reference: BIS(T-BUTYLSULFONYL)DIAZOMETHANE(138529-84-7)
• EPA Substance Registry System: BIS(T-BUTYLSULFONYL)DIAZOMETHANE(138529-84-7)

Safety Data

• Hazardous Substances Data: 138529-84-7(Hazardous Substances Data)

Relevant articles and documents

Resist composition and patterning process

The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.

Resist composition, method of forming resist pattern, novel compound and acid generator

A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including an acid generator (B1) containing a compound having a cation moiety represented by general formula (I) (in the formula, R5 represents a hydrogen atom or an organic group of 1 to 30 carbon atoms which may have a substituent; and Q5 represents a single bond or a divalent linking group).

Novel tertiary (meth)acrylates having lactone structure, polymers, resist compositions and patterning process

Novel tertiary (meth)acrylate compounds having a lactone structure are polymerizable into polymers having improved transparency, especially at the exposure wavelength of an excimer laser and dry etching resistance. Resist compositions comprising the polymers are sensitive to high-energy radiation, have a high resolution, and lend themselves to micropatterning with electron beams or deep-UV rays.