1420071-65-3 Usage
General Description
"BT-IDT-nC6" is a specific chemical compound that is classified as a small molecule organic semiconductor. It consists of a benzothiadiazole (BT) core linked to an indacenodithiophene (IDT) unit, with the addition of a linear n-alkyl chain (nC6) as a side chain. This combination of chemical structures imparts favorable electrical and optical properties, making it suitable for use in organic electronic devices such as organic field-effect transistors (OFETs), organic photovoltaics (OPVs), and organic light-emitting diodes (OLEDs). The addition of the n-alkyl side chain also enhances the solubility and processability of the compound, making it easier to incorporate into electronic device fabrication processes. Overall, "BT-IDT-nC6" represents a promising material for the development of advanced organic electronic technologies.
Check Digit Verification of cas no
The CAS Registry Mumber 1420071-65-3 includes 10 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 7 digits, 1,4,2,0,0,7 and 1 respectively; the second part has 2 digits, 6 and 5 respectively.
Calculate Digit Verification of CAS Registry Number 1420071-65:
(9*1)+(8*4)+(7*2)+(6*0)+(5*0)+(4*7)+(3*1)+(2*6)+(1*5)=103
103 % 10 = 3
So 1420071-65-3 is a valid CAS Registry Number.
1420071-65-3Relevant articles and documents
Improved charge transport and absorption coefficient in indacenodithieno[3,2-b]thiophene-based ladder-type polymer leading to highly efficient polymer solar cells
Xu, Yun-Xiang,Chueh, Chu-Chen,Yip, Hin-Lap,Ding, Fei-Zhi,Li, Yong-Xi,Li, Chang-Zhi,Li, Xiaosong,Chen, Wen-Chang,Jen, Alex K.-Y.
, p. 6356 - 6361 (2013/02/25)
A novel ladder-type donor (IDTT) is developed by substituting the two outward thiophenes of the IDT donor with two thieno[3,2-b]thiophenes. The polymer derived from this donor possesses longer effective conjugation and better planarity, which improves electron delocalization along the polymer backbone and charge mobility. The polymer solar cell device using PIDTT-DFBT shows a high power conversion efficiency of 7.03% with a large open-circuit voltage of 0.95 V without using any additives or post-solvent/thermal annealing processes. Copyright
