14396-21-5Relevant articles and documents
Reaction of Hydrogen Peroxide with Organosilanes under Chemical Vapour Deposition Conditions
Moore, Darren L.,Taylor, Mark P.,Timms, Peter L.
, p. 2673 - 2678 (2007/10/03)
When a stream of vapour at low pressure which contained a mixture of H2O2 with an organosilane, RSiH3 (R = alkyl or alkenyl), impinged on a silicon wafer, deposition of oxide films of nominal composition RxSiO(2-0.5x), where x 3 or higher alkenyl groups. or higher alkenylgroups. Possible mechanism for the Si-C bond cleavage reaction are discussed, with energetic rearrangement of radical intermediates of type Si(H)(R)(OOH)' being favoured.
Determination of the Molecular Structures of Bis(methylsilyl) Ether and Bis(dimethylsilyl) Ether in the Gas Phase by Electron Diffraction
Rankin, David W. H.,Robertson, Heather E.
, p. 265 - 270 (2007/10/02)
The molecular structures of the title compounds, O(SiH2Me)2 and O(SiHMe2)2, in the gas phase, have been determined by electron diffraction.The monomethylsilyl ether has at least two conformers, the major one (64percent) having the methyl groups twisted by 124(4) and 58(8) deg away from the positions in which the Si-C bonds are trans to O-Si bonds.Other important parameters (ra) are: r(Si-C) 186.4(3), r(Si-O) 164.2(3) pm; SiOSi 143.0(6) and OSiC 109.7(5) deg.In the dimethylsilyl ether the silyl groups are twisted by 101(8) and 41(4) deg away from the symmetrical position in which both Si-H bonds are cis to O-Si bonds, so that the dimethylsilyl groups are staggered with respect to each other.Principal parameters (ra) are: r(Si-C) 186.4(3), r(Si-O) 163.5(2) pm; SiOSi 148.4(9), OSiC 110.1(6), and CSiC 107.4(17) deg.