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bis-(3-nitro-4-p-formylphenyloxyphenyl)sulfone is a chemical with a specific purpose. Lookchem provides you with multiple data and supplier information of this chemical.

1448013-60-2

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1448013-60-2 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 1448013-60-2 includes 10 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 7 digits, 1,4,4,8,0,1 and 3 respectively; the second part has 2 digits, 6 and 0 respectively.
Calculate Digit Verification of CAS Registry Number 1448013-60:
(9*1)+(8*4)+(7*4)+(6*8)+(5*0)+(4*1)+(3*3)+(2*6)+(1*0)=142
142 % 10 = 2
So 1448013-60-2 is a valid CAS Registry Number.

1448013-60-2Downstream Products

1448013-60-2Relevant academic research and scientific papers

Role of oxadiazole moiety in different D-A polyazothines and related resistive switching properties

Pan, Liang,Hu, Benlin,Zhu, Xiaojian,Chen, Xinxin,Shang, Jie,Tan, Hongwei,Xue, Wuhong,Zhu, Yuejin,Liu, Gang,Li, Run-Wei

, p. 4556 - 4564 (2013)

Two donor-acceptor (D-A) polyazothines (PAs), incorporating the oxadiazole entity either acting as an electron acceptor (A) to form D-A structured PA-1 with the triphenylamine donor (D), or acting as a donor to form D-A structured PA-2 with the 3,3′-dinitro-diphenylsulfone acceptor, have been successfully synthesized via a polycondensation reaction. The variation in the role of the oxadiazole moiety in the D-A polymers, together with the use of different top electrode metals, leads to interesting electronic transport properties and various resistive switching behaviors of the present polyazothines. Pt-electrode devices based on a PA-1 active layer show a rewritable memory effect with poor endurance (less than 20 cycles), whereas the PA-2 based Pt devices exhibit write-once read-many-times (WORM) memory behavior. For the Al-electrode devices, both PAs demonstrate a much improved resistive switching effect, and the endurance of the PA-2 devices is better than that of the PA-1 devices. The difference in the electronic transport and memory properties of the four devices may originate from the different charge injection/extraction and electron transfer processes of the sandwich systems, and will provide guidelines for selecting both the proper D and A moieties in D-A polymers and electrode metals for high-performance resistance random access memories (RRAMs). The Royal Society of Chemistry 2013.

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