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3-(phenylsulfenyl)-2-trimethylsilylbenzo[b]thiophene is a chemical with a specific purpose. Lookchem provides you with multiple data and supplier information of this chemical.

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  • 1453485-27-2 Structure
  • Basic information

    1. Product Name: 3-(phenylsulfenyl)-2-trimethylsilylbenzo[b]thiophene
    2. Synonyms: 3-(phenylsulfenyl)-2-trimethylsilylbenzo[b]thiophene
    3. CAS NO:1453485-27-2
    4. Molecular Formula:
    5. Molecular Weight: 314.547
    6. EINECS: N/A
    7. Product Categories: N/A
    8. Mol File: 1453485-27-2.mol
  • Chemical Properties

    1. Melting Point: N/A
    2. Boiling Point: N/A
    3. Flash Point: N/A
    4. Appearance: N/A
    5. Density: N/A
    6. Refractive Index: N/A
    7. Storage Temp.: N/A
    8. Solubility: N/A
    9. CAS DataBase Reference: 3-(phenylsulfenyl)-2-trimethylsilylbenzo[b]thiophene(CAS DataBase Reference)
    10. NIST Chemistry Reference: 3-(phenylsulfenyl)-2-trimethylsilylbenzo[b]thiophene(1453485-27-2)
    11. EPA Substance Registry System: 3-(phenylsulfenyl)-2-trimethylsilylbenzo[b]thiophene(1453485-27-2)
  • Safety Data

    1. Hazard Codes: N/A
    2. Statements: N/A
    3. Safety Statements: N/A
    4. WGK Germany:
    5. RTECS:
    6. HazardClass: N/A
    7. PackingGroup: N/A
    8. Hazardous Substances Data: 1453485-27-2(Hazardous Substances Data)

1453485-27-2 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 1453485-27-2 includes 10 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 7 digits, 1,4,5,3,4,8 and 5 respectively; the second part has 2 digits, 2 and 7 respectively.
Calculate Digit Verification of CAS Registry Number 1453485-27:
(9*1)+(8*4)+(7*5)+(6*3)+(5*4)+(4*8)+(3*5)+(2*2)+(1*7)=172
172 % 10 = 2
So 1453485-27-2 is a valid CAS Registry Number.

1453485-27-2Relevant articles and documents

METHOD FOR PRODUCING AROMATIC COMPOUND

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Paragraph 0065; 0066, (2015/07/15)

A method for producing a heterocyclic compound represented by general formula (2) from a heterocyclic compound represented by general formula (1) (in the formulae, X1 represents a halogen atom; each of Y1 and Y2 independently represents an oxygen atom, su

Consecutive thiophene-annulation approach to π-extended thienoacene-based organic semiconductors with [1]benzothieno[3,2-b][1] benzothiophene (BTBT) substructure

Mori, Takamichi,Nishimura, Takeshi,Yamamoto, Tatsuya,Doi, Iori,Miyazaki, Eigo,Osaka, Itaru,Takimiya, Kazuo

, p. 13900 - 13913 (2013/10/01)

We describe a new synthetic route to the [1]benzothieno[3,2-b][1] benzothiophene (BTBT) substructure featuring two consecutive thiophene-annulation reactions from o-ethynyl-thioanisole substrates and arylsulfenyl chloride reagents that can be easily derived from arylthiols. The method is particularly suitable for the synthesis of unsymmetrical derivatives, e.g., [1]benzothieno[3,2-b]naphtho[2,3-b]thiophene, [1]benzothieno[3,2-b] anthra[2,3-b]thiophene, and naphtho[3,2-b]thieno[3,2-b]anthra[2,3-b]thiophene, a selenium-containing derivative, [1]benzothieno[3,2-b][1]benzoselenophene. It also allows us to access largely π-extended derivatives with two BTBT substructures, e.g., bis[1]benzothieno[2,3-d:2′,3′-d′]benzo[1, 2-b:4,5-b′]dithiophene and bis[1]benzothieno[2,3-d:2′,3′- d′]naphtho[2,3-b:6,7-b′]dithiophene (BBTNDT). It should be emphasized that these new BTBT derivatives are otherwise difficult to be synthesized. In addition, since various substrates and reagents, o-ethynyl-thioanisoles and arylthiols, respectively, can be combined, the method can be regarded as a versatile tool for the development of thienoacene-based organic semiconductors in this class. Among the newly synthesized materials, highly π-extended BBTNDT afforded very high mobility (>5 cm2 V-1 s-1) in its vapor-deposited organic field-effect transistors (OFETs), which is among the highest for unsubstituted acene- or thienoacenes-based organic semiconductors. In fact, the structural analyses of BBTNDT both in the single crystal and thin-film state indicated that an interactive two-dimensional molecular array is realized in the solid state, which rationalize the higher carrier mobility in the BBTNDT-based OFETs.

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