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1453485-33-0

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1453485-33-0 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 1453485-33-0 includes 10 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 7 digits, 1,4,5,3,4,8 and 5 respectively; the second part has 2 digits, 3 and 3 respectively.
Calculate Digit Verification of CAS Registry Number 1453485-33:
(9*1)+(8*4)+(7*5)+(6*3)+(5*4)+(4*8)+(3*5)+(2*3)+(1*3)=170
170 % 10 = 0
So 1453485-33-0 is a valid CAS Registry Number.

1453485-33-0Relevant articles and documents

Consecutive thiophene-annulation approach to π-extended thienoacene-based organic semiconductors with [1]benzothieno[3,2-b][1] benzothiophene (BTBT) substructure

Mori, Takamichi,Nishimura, Takeshi,Yamamoto, Tatsuya,Doi, Iori,Miyazaki, Eigo,Osaka, Itaru,Takimiya, Kazuo

, p. 13900 - 13913 (2013/10/01)

We describe a new synthetic route to the [1]benzothieno[3,2-b][1] benzothiophene (BTBT) substructure featuring two consecutive thiophene-annulation reactions from o-ethynyl-thioanisole substrates and arylsulfenyl chloride reagents that can be easily derived from arylthiols. The method is particularly suitable for the synthesis of unsymmetrical derivatives, e.g., [1]benzothieno[3,2-b]naphtho[2,3-b]thiophene, [1]benzothieno[3,2-b] anthra[2,3-b]thiophene, and naphtho[3,2-b]thieno[3,2-b]anthra[2,3-b]thiophene, a selenium-containing derivative, [1]benzothieno[3,2-b][1]benzoselenophene. It also allows us to access largely π-extended derivatives with two BTBT substructures, e.g., bis[1]benzothieno[2,3-d:2′,3′-d′]benzo[1, 2-b:4,5-b′]dithiophene and bis[1]benzothieno[2,3-d:2′,3′- d′]naphtho[2,3-b:6,7-b′]dithiophene (BBTNDT). It should be emphasized that these new BTBT derivatives are otherwise difficult to be synthesized. In addition, since various substrates and reagents, o-ethynyl-thioanisoles and arylthiols, respectively, can be combined, the method can be regarded as a versatile tool for the development of thienoacene-based organic semiconductors in this class. Among the newly synthesized materials, highly π-extended BBTNDT afforded very high mobility (>5 cm2 V-1 s-1) in its vapor-deposited organic field-effect transistors (OFETs), which is among the highest for unsubstituted acene- or thienoacenes-based organic semiconductors. In fact, the structural analyses of BBTNDT both in the single crystal and thin-film state indicated that an interactive two-dimensional molecular array is realized in the solid state, which rationalize the higher carrier mobility in the BBTNDT-based OFETs.

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