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1620126-63-7

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1620126-63-7 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 1620126-63-7 includes 10 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 7 digits, 1,6,2,0,1,2 and 6 respectively; the second part has 2 digits, 6 and 3 respectively.
Calculate Digit Verification of CAS Registry Number 1620126-63:
(9*1)+(8*6)+(7*2)+(6*0)+(5*1)+(4*2)+(3*6)+(2*6)+(1*3)=117
117 % 10 = 7
So 1620126-63-7 is a valid CAS Registry Number.

1620126-63-7Relevant academic research and scientific papers

Dicationic Heteroacenes Containing Thio- or Selenopyrylium Moieties

Nagahora, Noriyoshi,Kushida, Tomoko,Shioji, Kosei,Okuma, Kentaro

, p. 1800 - 1808 (2019)

Dicationic heteroacenes that bear thio- or selenopyrylium moieties were synthesized by addition reactions of the corresponding diones with a Grignard reagent, followed by a dehydration reaction of the resulting diols with Br?nsted acid. Alternatively, these dicationic heteroacenes were obtained from two-electron oxidations of the corresponding sulfur- or selenium-containing quinoids. The electronic structures of these dicationic heteroacenes were examined by NMR and UV-vis-NIR spectroscopy in conjunction with density functional theory calculations. The results of this combined experimental and theoretical approach strongly imply effective conjugation of 22π-electrons in a system that is distributed over the entire pentacene framework.

Stable 7,14-disubstituted-5,12-dithiapentacenes with quinoidal conjugation

Ye, Qun,Chang, Jingjing,Shi, Xueliang,Dai, Gaole,Zhang, Wenhua,Huang, Kuo-Wei,Chi, Chunyan

supporting information, p. 3966 - 3969 (2014/08/18)

Two 7,14-disubstituted-5,12-dithiapentacenes (1 and 2) with quinoidal conjugation were synthesized. Their ground-state quinoidal structures were proven by X-ray crystallographic analysis. They showed very different electronic and optical properties from those of the corresponding pentacene derivatives with diene conjugation, and their stability was significantly improved. Organic field effect transistors based on solution processed thin films of 1 and 2 exhibited a hole mobility of up to 0.032 cm-2 V-1 s -1.

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