17148-97-9Relevant academic research and scientific papers
Charge-transfer phase transition and ferromagnetism of iron mixed-valence complexes (n-CnH2n+1)4N[FeIIFe III(dto)3] (n = 3-6; dto = C2O 2S2)
Itoi, Miho,Ono, Yuuki,Kojima, Norimichi,Kato, Kenichi,Osaka, Keiichi,Takata, Masaki
, p. 1198 - 1207 (2006)
The iron mixed-valence complex, (n-C3H7) 4N[FeIIFeIII(dto)3] (dto = dithiooxalato) shows a charge-transfer (CT) phase transition at TCT = 122.4 K. In the vicinity of TCT, the spin state changes from Fe II (S = 2) - FeIII (S = 1/2) (high-temperature phase: HTP) to FeII (S = 0) - FeIII (S = 5/2) (low-temperature phase: LTP) accompanied by a charge transfer between FeII and Fe III. This complex also undergoes a ferromagnetic transition at 7 K in the LTP. In order to investigate the mechanism of the CT phase transition and the ferromagnetism, we have systematically synthesized (n-CnH 2n+1)4N[FeIIFeIII-(dto) 3] (n = 3-6), and have investigated their physical properties by magnetic susceptibility, powder X-ray diffraction measurements, and ESR spectroscopy. The compounds (n-CnH2n+1) 4N[FeIIFeIII(dto)3] (n = 3-6) display ferromagnetic phase transitions at 7 K, 7 K (& 13 K), 19.5 K, and 22 K, respectively. For n = 3 and 4, the CT phase transitions take place at T CT ≈ 120 K and TCT ≈ 140 K, respectively. For n = 5 and 6, on the other hand, the CT phase transition does not occur, and the spin configuration of FeII (S = 2) and FeIII (S = 1/2) corresponding to the HTP for n = 3 and 4 is stable between 2 K and 300 K. The cation size of (n-CnH2n+1)4N+ (n = 3-6) acts as an effective internal pressure which induces the CT phase transition and the ferromagnetic ordering in the [FeIIFeIII(dto) 3]-∞ layer. We also discuss the mechanism of the CT phase transition and the ferromagnetism induced by the charge-transfer interaction between FeII and FeIII. Wiley-VCH Verlag GmbH & Co. KGaA, 2006.
Room-Temperature Magnetoelectric Coupling in Electronic Ferroelectric Film based on [(n-C3H7)4N][FeIIIFeII(dto)3] (dto = C2O2S2)
Liu, Xiaolin,Wang, Bin,Huang, Xiaofeng,Dong, Xinwei,Ren, Yanping,Zhao, Haixia,Long, Lasheng,Zheng, Lansun
, p. 5779 - 5785 (2021)
Great importance has been attached to magnetoelectric coupling in multiferroic thin films owing to their extremely practical use in a new generation of devices. Here, a film of [(n-C3H7)4N][FeIIIFeII(dto)3] (1; dto = C2O2S2) was fabricated using a simple stamping process. As was revealed by our experimental results, in-plane ferroelectricity over a wide temperature range from 50 to 300 K was induced by electron hopping between FeII and FeIII sites. This mechanism was further confirmed by the ferroelectric observation of the compound [(n-C3H7)4N][FeIIIZnII(dto)3] (2; dto = C2O2S2), in which FeII ions were replaced by nonmagnetic metal ZnII ions, resulting in no obvious ferroelectric polarization. However, both ferroelectricity and magnetism are related to the magnetic Fe ions, implying a strong magnetoelectric coupling in 1. Through piezoresponse force microscopy (PFM), the observation of magnetoelectric coupling was achieved by manipulating ferroelectric domains under an in-plane magnetic field. The present work not only provides new insight into the design of molecular-based electronic ferroelectric/magnetoelectric materials but also paves the way for practical applications in a new generation of electronic devices.
