18826-13-6

Basic information

• Product Name: 4,4'-Bis(triphenylsilyl)-1,1'-biphenyl
• Synonyms: 4,4'-Bis(triphenylsilyl)-1,1'-biphenyl;BSB , 4,4'-di(triphenylsilyl)-biphenyl;4,4'-di(triphenylsilyl)-biphenyl;4,4'-BIS(TRIPHENYLSILYL)BIPHENYL
• CAS NO: 18826-13-6
• Molecular Formula: C₄₈H₃₈Si₂
• Molecular Weight: 670.99
• Mol File: 18826-13-6.mol
• Article Data: 5

Chemical Properties

• Melting Point: 292-293℃
• Boiling Point: 713.1 °C at 760 mmHg
• Flash Point: 352.4 °C
• Appearance: /
• Density: 1.17
• CAS DataBase Reference: 4,4'-Bis(triphenylsilyl)-1,1'-biphenyl(CAS DataBase Reference)
• NIST Chemistry Reference: 4,4'-Bis(triphenylsilyl)-1,1'-biphenyl(18826-13-6)
• EPA Substance Registry System: 4,4'-Bis(triphenylsilyl)-1,1'-biphenyl(18826-13-6)

Safety Data

• Hazardous Substances Data: 18826-13-6(Hazardous Substances Data)

Usage

Description

BSB, 4,4'-di(triphenylsilyl)-biphenyl, has a structure of two triphenyllsilanes joined by a biphenyl spacer. The other family member, UGH-2, has a phenyl spacer.

Upstream product

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Relevant articles and documents

Arylsilane compound, arylsilane polymer and application thereof

The invention relates to an arylsilane compound, an arylsilane polymer and application thereof. The structural formula of the arylsilane compound is shown as a formula I in the specification. The arylsilane compound takes an aryl unit as a core, an aryl s

BIS-TRIPHENYLSILYL COMPOUNDS AND THEIR APPLICATION ON ORGANIC ELECTRONIC DEVICE

The present invention discloses a bis-triphenylsilyl compound and its applications as a host material, electron transport material, or hole transport material in an organic electronic device. The general structure of the bis-triphenylsilyl compound is as follows: where G represents any atomic moiety or single bond of the functional group selected from the group consisting of the following: aryl group, cyclene group, and heterocyclic ring group; and R1?R32 represent substituents on aryl groups.

A deep red phosphorescent Ir(III) complex for use in polymer light-emitting diodes: Role of the arylsilyl substituents

(Figure Presented) Here we report the synthesis and electrophosphorescence of a new deep-red phosphorescent Ir(III) complex with spatially embracing and thus solubilizing arylsilyl-substituted ligands, Ir(III) tris(2-(2′- benzo[b]thienyl)-5-(4′-triphenylsilylphenyl)pyridinato-N,C 3′). A poly(N-vinylcarbazole) (PVK) film doped with this Ir(III) complex exhibited excellent phase homogeneity and showed saturated red electrophosphorescence of 2.7% maximum external quantum efficiency, whose Commission Internationale de L'Eclairage coordinates were (0.69, 0.30).