18855-94-2

Basic information

• Product Name: HAFNIUM SULFIDE/ 99.9%
• Synonyms: HAFNIUM SULFIDE/ 99.9%;hafnium disulphide;HAFNIUM SULFIDE 99.9% HFS2 F.W. 242.62 POWDER-200 MESH;Hafnium disulfide;Einecs 242-629-5;Hafnium sulfide (hfs2)
• CAS NO: 18855-94-2
• Molecular Formula: HfS2
• Molecular Weight: 242.62
• EINECS: 242-629-5
• Mol File: 18855-94-2.mol

Chemical Properties

• Appearance: /purple-brown hexagonal crystals
• Density: 6.030
• Vapor Pressure: 12600mmHg at 25°C
• CAS DataBase Reference: HAFNIUM SULFIDE/ 99.9%(CAS DataBase Reference)
• NIST Chemistry Reference: HAFNIUM SULFIDE/ 99.9%(18855-94-2)
• EPA Substance Registry System: HAFNIUM SULFIDE/ 99.9%(18855-94-2)

Safety Data

• Hazardous Substances Data: 18855-94-2(Hazardous Substances Data)

Usage

Uses

Used in Lubrication Industry:
Hafnium Sulfide/ 99.9% is used as a solid lubricant for its ability to provide low friction and wear resistance under various conditions. Its high purity and unique crystal structure contribute to its effectiveness as a lubricant, making it suitable for applications where traditional lubricants may fail.
Used in Electronics Industry:
Hafnium Sulfide/ 99.9% can be utilized in the electronics industry due to its semiconducting properties and low resistivity at room temperature. It may be employed in the development of electronic devices and components that require materials with specific electrical characteristics.
Used in Material Science Research:
The unique crystal structure and chemical properties of Hafnium Sulfide/ 99.9% make it an interesting subject for material science research. It can be studied for potential applications in advanced materials, such as superconductors, thermoelectric materials, or other novel materials with specific properties.
Used in Optoelectronics Industry:
The purple-brown color and optical properties of Hafnium Sulfide/ 99.9% may find applications in the optoelectronics industry, where materials with specific light absorption and emission characteristics are required for the development of optical devices, sensors, and other related technologies.

InChI:InChI=1/Hf.2S/q+4;2*-2

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Relevant articles and documents

IMPEDANCE AND ADMITTANCE MEASUREMENTS AT INTERCALATED n-HfS2/NONAQUEOUS ELECTROLYTE INTERFACE.

Capacitance, impedance, and admittance studies were performed on single-crystal n-HfS//2 before and after copper intercalation from acetonitrile-based electrolyte. The n-HfS//2/nonaqueous electrolyte interface was modeled by equivalent R-C circuits containing frequency dependent elements. Electrochemical intercalation by copper into n-HfS//2 introduced faradaic conductance effects. The composition of copper intercalated n-HfS//2 in close proximity to the interfacial region was obtained assuming a diffusion coefficient for copper in n-HfS//2 of 10** minus **8 cm**2/s. The photoanode demonstrated apparent degeneracy for greater than 0. 1 moles of intercalated copper, suggesting that progressive electronic population of the n-HfS//2 conduction band was occurring.

Piezooptical studies of group 4B transition metal disulfides ZrS 2 and HfS2

Piezotransmission spectra near the indirect absorption edge and piezoreflectance spectra in the visible region of group 4B transition metal disulfides ZrS2 and HfS2 have been studied by the stress modulation technique at 77 K. The uniaxial stress X was applied along the a axis and the spectra were measured using the polarized light, E//X and E⊥X, where E is the electric field of the incident light. The change of the energy levels by the strain is evaluated by comparing the piezo-modulated spectra with the wavelength-modulated spectra. The main peak and the broad structure at higher energy side in the spectra originate from the overlapping of the transitions at and near T point and the other structures at lower energy side are due to the transitions at L and M points.

INDIRECT ABSORPTION EDGE OF ZrS//2 AND HfS//2.

The transmission spectra and the wavelength-modulated transmission spectra of ZrS//2 and HfS//2 were measured simultaneously over the temperature range from 1. 9 to 300K, and structures in the spectra due to the indirect allowed transitions including exci

Material Design of Green-Light-Emitting Semiconductors: Perovskite-Type Sulfide SrHfS3

A current issue facing light-emitting devices is a missing suitable material for green emission. To overcome this, we explore semiconductors possessing (i) a deep conduction band minimum (CBM) and a shallow valence band maximum (VBM), (ii) good controllability of electronic conductivity and carrier polarity, and (iii) a directly allowed band gap corresponding to green emission. We focus on early transition metal (eTM)-based perovskites. The eTM cation's high and stable valence state makes its carrier controllability easy, and the eTM's nonbonding d orbital and the anion's p orbital, which constitute the deep CBM and shallow VBM, are favorable to n- and p-type doping, respectively. To obtain a direct band gap, we applied a scheme that folds the bands constituting the VBM at the zone boundary to the zone center where the CBM appears. Orthorhombic SrHfS3 was chosen as the candidate. The electrical conductivity was tuned from 6 × 10-7 to 7 × 10-1 S·cm-1 with lanthanum (La) doping and to 2 × 10-4 S·cm-1 with phosphorus (P) doping. Simultaneously, the major carrier polarity was controlled to n type by La doping and to p type by P doping. Both the undoped and doped SrHfS3 exhibited intense green photoluminescence (PL) at 2.37 eV. From the PL blue shift and short lifetime, we attributed the emission to a band-to-band transition and/or exciton. These results demonstrate that SrHfS3 is a promising green-light-emitting semiconductor.

Nanotubes of group 4 metal disulfides

Thermal decomposition of the respective trisulfides in a reducing (H2/inert gas) atmosphere has enabled nanotubes of HfS2, ZrS2, and TiS2 to be synthesized and characterized. The dimensions of the nanotubes formed depend on the Group 4 metal used. The transmission electron micrograph image shows nanotubular structures of HfS2 with outer diameters of 55-60 nm and inner core diameters of 17-30 nm.