188917-68-2Relevant academic research and scientific papers
High carrier mobility up to 0.1 cm2/Vs and a wide mesomorphic temperature range of alkynyl-substituted terthiophene and quaterthiophene derivatives
Funahashi, Masahiro,Hanna, Jun-Ichi
, p. 225/[1179]-235/[1189] (2007/10/03)
Smectic semiconductors with high carrier mobility were designed and synthesized. The hole mobility of 3-TTP-yne-4 and 3-QTP-yne-3 at room temperature was 0.06cm2/Vs and 0.1cm2/Vs, respectively. They exhibit highly ordered smectic phases around room temperature, with softness to some extent, which make it possible homogeneous film with low defect density. Intermolecular distance in the smectic phase of 3-QTP-yne-4 is almost same as that of 3-TTP-yne-4. In this material, larger n-conjugate system results in higher carrier mobility.
Mesomorphic behaviors and charge carrier transport in terthiophene derivatives
Funahashi, Masahiro,Hanna, Jun-Ichi
, p. 1/[529]-12/[540] (2007/10/03)
We synthesized dialkylterthiophene derivatives ω-substituted with cyclohexylethyl moiety, which exhibit smectic mesophases at room temperature, and investigated their charge carrier transport properties. In particular, transpentylcyclohexylethyl-propylterthiophene (3-TTP-C2CH-5) held SmB phase at room temperature. Furthermore, a 3:1 mixture of 3-TTP-C2CH-5 and (2-methylbutyl)-dodecylterthiophene (5*-TTP-12) showed the SmB phase between 101°C and -15°C, and the highly ordered smectic phase below -15°C. In the SmB phase of the mixture, hole and electron mobility was 10-3 cm2/Vs, and independent of temperature and electric field over room temperature. However, below room temperature, the mobility depended on both temperature and electric field, as is often observed in organic amorphous solids and formarized by Gaussian disorder model, suggesting that the carrier transport in the smectic mesophase can be explained by the hopping conduction in disordered molecular sites.
