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Pentakis(dimethylamino)niobium(V), 99% is a high-purity chemical compound consisting of niobium in the +5 oxidation state, coordinated with five dimethylamino ligands. Pentakis(dimethylamino)niobium(V), 99% is crucial for the semiconductor and electronics industries due to its role as a precursor in the production of thin films and niobium-based materials through chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes.

19824-58-9

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19824-58-9 Usage

Uses

Used in Semiconductor and Electronics Industry:
Pentakis(dimethylamino)niobium(V), 99% is used as a precursor for the production of thin films and niobium-based materials. Its high purity ensures the quality and reliability of the resulting films and materials, which are essential for various applications in the semiconductor and electronics industry.
Used in Research Laboratories:
Pentakis(dimethylamino)niobium(V), 99% is also utilized in research laboratories for its unique chemical properties and potential applications in catalysis and materials science. Its exploration in these fields can lead to the development of new technologies and advancements in various industries.

Check Digit Verification of cas no

The CAS Registry Mumber 19824-58-9 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,9,8,2 and 4 respectively; the second part has 2 digits, 5 and 8 respectively.
Calculate Digit Verification of CAS Registry Number 19824-58:
(7*1)+(6*9)+(5*8)+(4*2)+(3*4)+(2*5)+(1*8)=139
139 % 10 = 9
So 19824-58-9 is a valid CAS Registry Number.
InChI:InChI=1/5C2H6N.Nb/c5*1-3-2;/h5*1-2H3;/q5*-1;+5

19824-58-9 Well-known Company Product Price

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  • Alfa Aesar

  • (42761)  Pentakis(dimethylamino)niobium(V), 99% (metals basis)   

  • 19824-58-9

  • 250mg

  • 221.0CNY

  • Detail
  • Alfa Aesar

  • (42761)  Pentakis(dimethylamino)niobium(V), 99% (metals basis)   

  • 19824-58-9

  • 1g

  • 887.0CNY

  • Detail
  • Alfa Aesar

  • (42761)  Pentakis(dimethylamino)niobium(V), 99% (metals basis)   

  • 19824-58-9

  • 5g

  • 4434.0CNY

  • Detail

19824-58-9Relevant academic research and scientific papers

COMPOUND AND COMPOSITION FOR FORMING THIN FILM COMPRISING THE SAME

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Paragraph 0091-0094, (2021/08/24)

The present invention provides a compound represented by chemical formula and a method for manufacturing a metal thin film using the same.

Unexpected formation of (dimethylaminomethylene)methylamide complexes from the reactions between metal chlorides and lithium dimethylamide

Zhang, Xin-Hao,Chen, Shu-Jian,Cai, Hu,Im, Hee-Jung,Chen, Tianniu,Yu, Xianghua,Chen, Xuetai,Lin, Zhenyang,Wu, Yun-Dong,Xue, Zi-Ling

, p. 1338 - 1341 (2009/02/01)

Reactions of MCl5 (M = Nb, Ta) with LiNMe2 have been found to yield M(NMe2)4(η2-MeNCH 2NMe2) (M = Nb, 2a; Ta, 2b) containing a chelating ligand (dimethylaminomethylene)methylamide, as confirmed by NMR spectroscopy, DFT calculations, and their reactivity studies.

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