19962-11-9

Usage

Uses

Used in Semiconductor Industry:
TETRAKIS(DIMETHYLAMINO)HAFNIUM is used as a precursor in the fabrication of MOCVD films for the production of hafnium-based thin films. It is essential for the growth of high-k dielectric films, which are vital for the development of advanced semiconductor devices and next-generation electronics and computer technologies.
Used in Microelectronics Manufacturing:
TETRAKIS(DIMETHYLAMINO)HAFNIUM is used as a key chemical in the manufacturing of microelectronics, including integrated circuits and thin film transistors. Its high vapor pressure and easy handling make it an ideal choice for thin film deposition processes, contributing to the production of high-quality electronic components.

Upstream product

• 3585-33-9 lithium dimethylamide 
• 13499-05-3 hafnium tetrachloride 
• 7732-18-5 water 

Downstream Products

• 1401033-13-3 (N-((6-(1H-pyrrol-2-yl)pyridin-2-yl)methyl)-2,6-diisopropylbenzeneamine^(2-))Hf(IV)(dimethylamido)₂ 

Relevant academic research and scientific papers

Organometallic compound, its synthesis method, and solution raw material and metal-containing thin film containing the same

The organometallic compound of the present invention is a compound that has bonds between metal atoms and nitrogen atoms or bonds between semimetal atoms and nitrogen atoms, and the content of chlorine in the compound is 200 ppm or less and the content of water is 30 ppm or less. In addition, the general formula of this compound is represented by the following formula (1): M[(R1)2N](n?s)(R2)s??(1) wherein, M represents a metal atom or semimetal atom, with the metal atom being Hf, Zr, Ta, Ti, Ce, Al, V, La, Nb or Ni, and the semimetal atom being Si, R1 represents a methyl group or ethyl group, R2 represents an ethyl group, n represents the valence of M, and s represents an integer of 0 to n?1.

Synthesis and Characterization of Group 4 Amido Silyl Complexes Free of Anionic π-Ligands

A series of early-transition-metal silyl complexes free of anionic π-ligands such as cyclopentadienyl (Cp = η5-C5H5) have been synthesized. These Cp-free complexes (Me2N)3MSi(SiMe3)3 [M = Zr (1), Hf (2)], (Me2N)3TiSiPh2But (3), (Me2N)3ZrSiPh2But·0.5THF (4), (Me2N)3HfSiPh2But·nTHF [n = 0.5 (5a), 1 (5b)], and (Me2N)2[(Me3Si)2N]ZrSiR3 [SiR3 = Si(SiMe3)3 (7), SiPh2But (8)] were prepared by metathetic reactions of chloro triamido complexes (Me2N)3MCl (M = Ti, Zr, Hf) or (Me2N)2[(Me3Si)2N]ZrCl (6) with silyllithium reagents Li(THF)3Si(SiMe3)3 or Li(THF)3SiPh2But. The structures of 1, 3, 4, 5b, and 8 have been determined by X-ray crystallography and show that 1, 3, and 8 adopt a distorted tetrahedral coordination geometry while 4 and 5b have a distorted trigonal bipyramidal geometry around the metal. The unit cell parameters are as follows. 1: space group R3c, a = 15.505(2) A?, c = 19.308(4) A?, V = 4019.9(13) A?3, Z = 6. 3: space group P21, a = 8.633(5) A?, b = 14.790(7) A?, c = 9.388(4) A?, β = 92.44(4)°, V = 1197.6(10) A?3, Z = 2. 4: space group Pbca, a = 16.538(9) A?, b = 17.282(7) A?, c = 18.566(8) A?, V = 5306(4) A?3, Z = 8. 5b: space group Pna21, a = 17.463(6) A?, b = 9.453(3) A?, c = 17.800(6) A?, V = 2938(2) A?3, Z = 4. 8: space group Pca21, a = 19.775(5) A?, b = 10.182(2) A?, c = 15.752(5) A?, V = 3172(2) A?3, Z = 4. The M-Si bond distances for 1, 3, 4, 5b, and 8 are 2.781(2), 2.635(2), 2.803(2), 2.807(4), and 2.860(2) A?, respectively. The Zr-Si bond in 8, to our knowledge, is the longest reported Zr-Si bond.