210347-52-7

Basic information

• Product Name: F8BT
• Synonyms: F8BT;Poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazol-4,8-diyl)];Poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazol-4,7-diyl)];Benzothiadiazole-9,9-dioctylfluorene alternating copolyMer;Benzothiadiazole-9,9-dioctylfluorene copolyMer;PFBT;PFO-BT;Poly(9,9-dioctylfluorene-alt-benzothiadiazole)
• CAS NO: 210347-52-7
• Molecular Formula: (C35H42N2S)n
• Mol File: 210347-52-7.mol
• Article Data: 0

Chemical Properties

• Melting Point: 240.2 °C
• Appearance: /
• CAS DataBase Reference: F8BT(CAS DataBase Reference)
• NIST Chemistry Reference: F8BT(210347-52-7)
• EPA Substance Registry System: F8BT(210347-52-7)

Safety Data

• WGK Germany: 3
• Hazardous Substances Data: 210347-52-7(Hazardous Substances Data)

Usage

Description

F8BT, also known as a fluorene copolymer, is a light-emitting polymer (LEP) characterized by its low energy of the lowest unoccupied molecular orbital (LUMO), high electron mobility, and luminance. It is widely recognized for its deep lying HOMO and LUMO levels (5.9 / 3.3 eV), which contribute to its air stability. Additionally, F8BT exhibits liquid-crystalline and beta phases, making it a versatile material for various applications and basic research.

Uses

Used in Organic Light Emitting Diode (OLED) Devices:
F8BT is used as an emissive species in OLEDs, providing green emission. It is particularly useful in device structures such as ITO/PEDOT:PSS/TFB/F8BT/F8imBT-Br/Ca/Al, where it contributes to a maximum external quantum efficiency (EQE) of 5.1%, a maximum current efficiency of 17.9 cd/A, and a maximum power efficiency of 16.6 lm/W.
Used in Organic Field-Effect Transistors (OFETs):
F8BT serves as an approximately balanced p-type and n-type polymer for OFETs and light-emitting transistors, making it a valuable material for the development of electronic devices with improved performance and stability.
Used in Organic Photovoltaics (OPVs):
F8BT is utilized as a polymeric acceptor in OPVs, where its air stability and deep lying HOMO and LUMO levels contribute to enhanced photovoltaic performance.
Used in Thermoelectric Applications:
F8BT can be combined with poly(9,9-di-n-octylfluorenyl-2,7-diyl) (PTO) to study the effects of noise sources on photoconducting charge transports by evaluating conductivity and noise source density (Nt). It may also form a nanocomposite with single-walled carbon nanotubes (SWCNT) with excellent electric properties and a high Seebeck coefficient, making it a promising material for the development of photovoltaic power and biomass energy applications.
Used in Basic Research:
Due to its liquid-crystalline and beta phases, F8BT is widely used for basic research purposes, allowing scientists to explore its potential in various applications and improve the understanding of its properties and behavior.

Usage Datasheet

For a high efficiency green OLED we recommend blending F8 with F8BT with the below specifications. This ink can then be applied either in air or in a glovebox with little difference in performance provided exposure time and light levels are minimised. At typical concentrations of 10 mg/ml 100 mg of F8 (PFO) will make around 200 devices on Ossila's standard ITO substrates (20 x 15 mm) assuming 50% solution usage (50% loss in filtering and preparation). OLED reference device: F8 with F8BT Blend ratio of 19:1 (F8:F8BT) in Toluene Total concentration of 10 mg/ml 0.45 μm PTFE filter Spun at 2000 rpm (approx. 70 nm thickness) Pipetting 20 μl of the above solutions onto a substrate spinning at 2000 rpm should provide a good even coverage with approximately 70 nm thickness. The substrate needs to be spun until dry, which is typically only a few seconds — 15 seconds should be ample to achieve this. Thermal annealing should be undertaken at 80°C for 10 minutes prior to cathode deposition A basic but efficient OLED can be made using PEDOT:PSS as a hole transport layer and Calcium/Aluminium as the electron contact. When used with the Ossila ITO substrates and shadow masks this produces an easy to fabricate yet efficient >100 cd/m2) device.