22483-09-6Relevant articles and documents
Method for preparing aminoacetaldehyde dimethyl acetal
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Paragraph 0047; 0050; 0051; 0054; 0055; 0058, (2020/11/22)
The invention discloses a method for preparing aminoacetaldehyde dimethyl acetal, which comprises the following steps: S1, adding a phase transfer catalyst A and vinyl acetate into a reaction flask, introducing a certain amount of chlorine while stirring, and performing heat-insulation stirring until the color of the reaction solution becomes colorless to obtain a chlorination solution; S2, dropwise adding the chlorination liquid prepared in the step S1 into methanol for reaction to prepare a chloroacetaldehyde dimethyl acetal crude product; S3, transferring the chloroacetaldehyde dimethyl acetal crude product prepared in the step S2 to an autoclave, introducing liquid ammonia, carrying out heating and pressurizing reaction, and after the reaction is finished, adding alkali to adjust the pH value; and S4, decompressing and rectifying the reaction product to obtain the target product, aminoacetaldehyde dimethyl acetal. By adopting the method, high-purity aminoacetaldehyde dimethyl acetal can be prepared, and the industrial production requirement of aminoacetaldehyde dimethyl acetal can be met.
Photorelease of primary aliphatic and aromatic amines by visible-light-induced electron transfer
Edson, Joseph B.,Spencer, Liam P.,Boncella, James M.
supporting information; experimental part, p. 6156 - 6159 (2012/01/05)
Visible-light-absorbing tris(bipyridyl)ruthenium(II) has been used to mediate electron transfer to N-methylpicolinium carbamates that undergo C-O bond fragmentation followed by spontaneous carbon dioxide release to give free amines. Release of several aliphatic and aromatic primary amines has been demonstrated under mild conditions using visible light.
Amine compounds, resist compositions and patterning process
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, (2008/06/13)
Amine compounds having a cyano group are useful in resist compositions for preventing a resist film from thinning and also for enhancing the resolution and focus margin of resist.