25601-74-5Relevant academic research and scientific papers
PHOTORESIST PATTERN TRIMMING COMPOSITIONS AND PATTERN FORMATION METHODS
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Paragraph 0054-0055, (2020/12/13)
Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the aromatic sulfonic acid is of general formula (I): wherein: Ar1 represents an aromatic group; R1 independently represents a halogen atom, hydroxy, substituted or unsubstituted alkyl, substituted or unsubstituted heteroalkyl, substituted or unsubstituted carbocyclic aryl, substituted or unsubstituted heterocyclic aryl, substituted or unsubstituted alkoxy, or a combination thereof, wherein adjacent R1 groups together optionally form a fused ring structure with Ar1; a represents an integer of 2 or more; and b represents an integer of 1 or more, provided that a+b is at least 3 and is not greater than the total number of available aromatic carbon atoms of Ar1, and two or more of R1 are independently a fluorine atom or a fluoroalkyl group bonded directly to an aromatic ring carbon atom.
Structural Effects on the Transition States of Imine-Forming Eliminations in N-Substituted O-(Arylsulfonyl)hydroxylamines
Hoffman, Robert V.,Shankweiler, Jean M.
, p. 4019 - 4022 (2007/10/02)
A series of amines with various alkyl and aryl substituents at C-1 were converted to the corresponding N-(arylsulfonoxy)amines, which served as precursors for base-promoted, imine-forming elimination.By varying the bases used to promote the elimination and by varying the leaving groups attached to nitrogen, the Broensted parameters β and βlgCH3 were determined.These were used to locate the transition state on the More O'Ferrall-Jencks energy surface for elimination.Substituents were found to influence the structure of the activated complex markedly.Resonance effects were most important, while inductive effects had little influence .
