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Indium Nitride (InN) is a semiconductor material with unique chemical and physical properties. It is characterized by its high electron mobility, direct bandgap, and high electron saturation velocity. Indium Nitride is known for its wurtzite crystal structure with lattice parameters a=0.353 nm and c=0.570 nm. It can be synthesized by reacting In2O3 with ammonia at high temperatures, resulting in a product with 99.999% purity and a -100 mesh size. INDIUM NITRIDE exhibits semiconductor and electroluminescence properties, making it a promising material for various applications in the optoelectronic industry.

25617-98-5

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25617-98-5 Usage

Uses

Used in Optoelectronic Industry:
Indium Nitride is used as a key material in the manufacturing of optoelectronic devices due to its semiconductor and electroluminescence properties. It plays a crucial role in the development of light-emitting diodes (LEDs), laser diodes, and solar cells, where its high electron mobility and direct bandgap contribute to improved device performance and efficiency.
In the LED Manufacturing:
Indium Nitride is used as a semiconductor material for creating high-brightness and energy-efficient LEDs. Its direct bandgap allows for efficient light emission, making it an ideal choice for various lighting applications, including automotive headlights, traffic signals, and general illumination.
In the Laser Diode Manufacturing:
Indium Nitride is utilized as an active layer in laser diodes, taking advantage of its high electron saturation velocity and direct bandgap. This enables the development of compact and high-speed laser devices for applications such as data storage, communication, and sensing.
In the Solar Cell Manufacturing:
Indium Nitride is employed as a light-absorbing material in solar cells, where its high electron mobility and direct bandgap contribute to improved energy conversion efficiency. This makes it a promising candidate for the development of next-generation solar energy technologies.

Check Digit Verification of cas no

The CAS Registry Mumber 25617-98-5 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 2,5,6,1 and 7 respectively; the second part has 2 digits, 9 and 8 respectively.
Calculate Digit Verification of CAS Registry Number 25617-98:
(7*2)+(6*5)+(5*6)+(4*1)+(3*7)+(2*9)+(1*8)=125
125 % 10 = 5
So 25617-98-5 is a valid CAS Registry Number.
InChI:InChI=1/In.N/rInN/c1-2

25617-98-5 Well-known Company Product Price

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  • Aldrich

  • (490628)  Indium(III)nitride  99.9% trace metals basis

  • 25617-98-5

  • 490628-1G

  • 2,482.74CNY

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  • Aldrich

  • (490628)  Indium(III)nitride  99.9% trace metals basis

  • 25617-98-5

  • 490628-5G

  • 8,260.20CNY

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25617-98-5SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 14, 2017

Revision Date: Aug 14, 2017

1.Identification

1.1 GHS Product identifier

Product name azanylidyneindigane

1.2 Other means of identification

Product number -
Other names indium nitride

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:25617-98-5 SDS

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