363179-66-2

Usage

Uses

Used in Chemical Synthesis:
3,3-difluoro-Piperidine is used as a key intermediate in the synthesis of various chemical compounds due to its distinctive structure and reactivity, facilitating the creation of new molecules with specific properties.
Used in Pharmaceutical Research and Development:
In the pharmaceutical industry, 3,3-difluoro-Piperidine is used as a building block for the synthesis of drug molecules, leveraging its unique chemical structure to potentially enhance the effectiveness of medications and contribute to the development of novel therapeutic agents.
While the provided materials do not specify different applications across various industries, the general uses outlined above encompass the broad potential of 3,3-difluoro-Piperidine in chemical and pharmaceutical applications. Further research and testing are essential to fully realize its capabilities and optimize its applications in these fields.

InChI:InChI=1/C5H9F2N/c6-5(7)2-1-3-8-4-5/h8H,1-4H2

Upstream product

• 59554-81-3 N-t-butyl-3-piperidone 

Relevant academic research and scientific papers

Precursors for depositing silicon-containing films and methods for making and using same

Aminosilane precursors for depositing silicon-containing films, and methods for depositing silicon-containing films from these aminosilane precursors, are described herein. In one embodiment, there is provided an aminosilane precursor for depositing silicon-containing film comprising the following formula (I): [in-line-formulae](R1R2N)nSiR34-n??(I)[/in-line-formulae] wherein substituents R1 and R2 are each independently chosen from an alkyl group comprising from 1 to 20 carbon atoms and an aryl group comprising from 6 to 30 carbon atoms, at least one of substituents R1 and R2 comprises at least one electron withdrawing substituent chosen from F, Cl, Br, I, CN, NO2, PO(OR)2, OR, SO, SO2, SO2R and wherein R in the at least one electron withdrawing substituent is chosen from an alkyl group or an aryl group, R3 is chosen from H, an alkyl group, or an aryl group, and n is a number ranging from 1 to 4.

Precursors for depositing silicon-containing films and methods for making and using same

Aminosilane precursors for depositing silicon-containing films, and methods for depositing silicon-containing films from these aminosilane precursors, are described herein. In one embodiment, there is provided an aminosilane precursor for depositing silicon-containing film comprising the following formula (I): ????????(R1R2N)nSiR34-n?????(I) wherein substituents R1 and R2 are each independently chosen from an alkyl group comprising from 1 to 20 carbon atoms and an aryl group comprising from 6 to 30 carbon atoms, at least one of substituents R1 and R2 comprises at least one electron withdrawing substituent chosen from F, Cl, Br, I, CN, NO2, PO(OR)2, OR, SO, SO2, SO2R and wherein R in the at least one electron withdrawing substituent is chosen from an alkyl group or an aryl group, R3 is chosen from H, an alkyl group, or an aryl group, and n is a number ranging from 1 to 4.