39082-23-0

Usage

Uses

Used in Electronics Industry:
Hafnium telluride is used as a material in electronic components for its high thermal stability and excellent electrical conductivity, which are crucial for the performance and reliability of electronic devices.
Used in Optoelectronics Industry:
In the optoelectronics field, hafnium telluride is utilized for its potential in developing new materials that can improve the efficiency and performance of optoelectronic devices, such as photodetectors and solar cells.
Used in Thermoelectric Devices:
Hafnium telluride is employed as a thermoelectric material, which can convert temperature differences into electrical energy, making it useful for applications in waste heat recovery and power generation systems.
Used in Energy Storage and Conversion Applications:
Hafnium telluride is studied for its potential use in energy storage and conversion technologies, such as batteries and fuel cells, due to its unique properties that could enhance the efficiency and performance of these systems.
Used in Material Science Research:
Hafnium telluride is used as a subject of research in material science for the development of new materials with improved properties, which could lead to breakthroughs in various technological applications.

InChI:InChI=1/Hf.2Te/q+4;2*-2

Upstream product

• 14683-12-6 tellurium 

Relevant academic research and scientific papers

Synthesis and crystal structure of Hf2Te

Hf2Te was prepared by arc-melting appropriate compressed mixtures of HfTe2 and hafnium. The structure of the new hafnium-rich telluride was determined by means of powder diffractometry, RB=0.0565. Hf2Te adopts a Nb2Se-type structure, monoclinic, space group C2/m, Z=8, Pearson symbol mS24, a= 1516.3(2) pm, b=370.26(4) pm, c= 1006.4(1) pm, β=90.50(1)°. The structure comprises pairwise interpenetrating columns of trans-face-shared centred Hf9 cuboids. The columns form puckered slabs which are interconnected by homo- and heteronuclear bonds. Tellurium atoms are one-sidedly coordinated by six hafnium atoms. The coordination configurations about the two distinct tellurium atoms represent Hf6Te hypho-fragments of a tri-capped trigonal prismatic Hf9Te closo-cluster. Characteristic features of four other M2Q structure types are elucidated. The valence electron concentration available for metal-metal bonding together with the cohesive energy of the respective metal are found to control the formation of the various M2Q metal partial structures.

Zr stabilized Ti5Te4-type hafnium telluride

A new Ti5Te4-type compound, Zr stabilized hafnium telluride was discovered and characterized with electron crystallography. Microanalyses and preparative work show that Zr stabilizes Ti5Te 4-type hafnium telluride and destabilizes the competing phase, Hf3Te2.

Solid-state tellurium-125 nuclear magnetic resonance studies of transition-metal ditellurides

Solid-state 125Te NMR studies of inorganic compounds containing tellurium in oxidations states ranging from -II to VI have been made. The chemical shift tensors of Te(OH)6, TeCl4, TeO2 and elemental tellurium ha

Thermal Decomposition and Oxidation of HfTe5 Single Crystals

We report on time differential perturbed angular correlation measurements of the nuclear quadrupole interaction of (181)Hf(β(-))(181)Ta in HfTe5 single crystals during thermal decomposition and oxidation above room temperature. - HfTe5 decomposes under vacuum to HfTe3 + Te and finally to HfTe2 + Te at temperatures between 740-830 K and 820-860 K, respectively.Upon subsequent annealing at about 730 K both products recrystallize to HfTe5. - In air HfTe5 reacts at mild temperatures (380 K) and is completely transformed to a cream-coloured product after 220 h.Above 730 K this product reacts to HfTe3O8, which is stable up to 1050 K.At higher temperatures this material decomposes irreversibly to HfO2. - Key words: Phase Transitions / Solid State Reactions / Spectroscopy, Nuclear Quadrupole Resonance

Hf(SexTe1-x)2: Deviation from Végard's law in mixed systems

Polycrystalline Hf(SexTe1-x)2 has been prepared by iodine mineralization from the elements at 800°C. Homogeneous solid solutions result over the range 0 a and c parameters, determined by using the Debye-Scherrer method, were found to vary linearly and parabolically, respectively, with composition. The non-Ve?gard behavior is ascribed to packing mismatches in the layers and is compared to behavior in other mixed transition-metal dichalcogenides. A brief comparison to pyrite systems is presented, and some general aspects of mixed materials are discussed.