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404001-42-9

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404001-42-9 Usage

General Description

Spiro-2NPB, also known as 2,2',7,7'-Tetrakis[N-naphthalenyl(phenyl)-amino]-9,9'-spirobifluorene, is a chemical compound commonly used in organic light-emitting diodes (OLEDs). It is known for its high thermal stability and excellent electron transport properties, making it a valuable material for producing efficient and long-lasting OLEDs. Spiro-2NPB has a spirobifluorene core with four amine-functionalized naphthalene and phenyl groups attached, which contribute to its high stability and electron mobility. Spiro-2NPB , 2,2',7,7'-Tetrakis[N-naphthalenyl(phenyl)-aMino]-9 is widely used in the electronics industry for its ability to enhance the performance and longevity of OLED devices, making it an important component in the production of high-quality display screens and lighting applications.

Check Digit Verification of cas no

The CAS Registry Mumber 404001-42-9 includes 9 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 6 digits, 4,0,4,0,0 and 1 respectively; the second part has 2 digits, 4 and 2 respectively.
Calculate Digit Verification of CAS Registry Number 404001-42:
(8*4)+(7*0)+(6*4)+(5*0)+(4*0)+(3*1)+(2*4)+(1*2)=69
69 % 10 = 9
So 404001-42-9 is a valid CAS Registry Number.

404001-42-9Downstream Products

404001-42-9Relevant articles and documents

Hole transport layer material, preparation method thereof, perovskite solar cell and preparation method of perovskite solar cell

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Paragraph 0046-0051, (2020/10/04)

The invention discloses an application of a hole transport layer material in a perovskite solar cell. The hole transport layer material takes spirofluorene as a core and N-aryl naphthylamine as four end groups. The perovskite solar cell comprises a substrate, an electrode, a hole transport layer, an active layer, an electron transport layer and an electrode, wherein the active layer is traditionalmethylamine lead iodide (MAPbI) type perovskite, and the hole transport layer is the N-aryl naphthylamine-based hole transport layer material disclosed by the invention. The perovskite cell preparedby the invention has relatively high open-circuit voltage, relatively high short-circuit current and relatively high filling factor, the highest energy conversion efficiency of the corresponding perovskite cell can reach 17.33%, and in addition, under the condition of no doping, a corresponding perovskite device still has relatively high photoelectric conversion efficiency. The hole transport material can be dissolved in a solvent in a perovskite preparation process and finally remains in a perovskite layer to form a heterojunction structure, so that the hole extraction efficiency is improved,the hole-electron recombination probability is reduced, and the device stability is improved through introduction of N-aryl naphthylamine.

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