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(E)-1,2-bis(5-(trimethylstannyl)thiophen-2-yl)ethene is a chemical compound characterized by the presence of two thiophene rings, each with a trimethylstannyl group attached at the 5th position. As a conjugated diene, this molecule features alternating single and double bonds, facilitating electron delocalization across its structure. This unique arrangement endows the compound with versatile chemical reactivity and potential applications in various fields.

477789-30-3

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477789-30-3 Usage

Uses

Used in Organic Synthesis:
(E)-1,2-bis(5-(trimethylstannyl)thiophen-2-yl)ethene is utilized as a key intermediate in organic synthesis for its capacity to engage in a range of chemical reactions. Its reactivity stems from the presence of the trimethylstannyl groups and the conjugated diene system, making it suitable for cross-coupling reactions and other synthetic transformations.
Used in Materials Chemistry:
In the realm of materials chemistry, (E)-1,2-bis(5-(trimethylstannyl)thiophen-2-yl)ethene is employed as a building block for the development of new materials. Its structural features allow for the creation of polymers and other materials with tailored properties, such as improved stability or specific interactions with other molecules.
Used in Organic Electronics and Optoelectronics:
(E)-1,2-bis(5-(trimethylstannyl)thiophen-2-yl)ethene is of interest in the field of organic electronics and optoelectronics. It is considered for use in the fabrication of organic semiconductors and other electronic materials due to its potential to contribute to the performance of these devices, such as enhancing charge transport or modulating optical properties.
Used in the Construction of Organic Semiconductors:
Within the application industry of organic semiconductors, (E)-1,2-bis(5-(trimethylstannyl)thiophen-2-yl)ethene is used as a component for constructing semiconductor materials. Its incorporation can influence the electronic properties of these semiconductors, potentially improving their performance in various electronic devices and systems.

Check Digit Verification of cas no

The CAS Registry Mumber 477789-30-3 includes 9 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 6 digits, 4,7,7,7,8 and 9 respectively; the second part has 2 digits, 3 and 0 respectively.
Calculate Digit Verification of CAS Registry Number 477789-30:
(8*4)+(7*7)+(6*7)+(5*7)+(4*8)+(3*9)+(2*3)+(1*0)=223
223 % 10 = 3
So 477789-30-3 is a valid CAS Registry Number.

477789-30-3Downstream Products

477789-30-3Relevant academic research and scientific papers

Furan substituted diketopyrrolopyrrole and thienylenevinylene based low band gap copolymer for high mobility organic thin film transistors

Sonar, Prashant,Zhuo, Jing-Mei,Zhao, Li-Hong,Lim, Kai-Ming,Chen, Jihua,Rondinone, Adam J.,Singh, Samarendra P.,Chua, Lay-Lay,Ho, Peter K. H.,Dodabalapur, Ananth

, p. 17284 - 17292 (2012)

A novel solution processable donor-acceptor (D-A) based low band gap polymer semiconductor poly{3,6-difuran-2-yl-2,5-di(2-octyldodecyl)-pyrrolo[3,4- c]pyrrole-1,4-dione-alt-thienylenevinylene} (PDPPF-TVT), was designed and synthesized by a Pd-catalyzed Stille coupling route. An electron deficient furan based diketopyrrolopyrrole (DPP) block and electron rich thienylenevinylene (TVT) donor moiety were attached alternately in the polymer backbone. The polymer exhibited good solubility, film forming ability and thermal stability. The polymer exhibits wide absorption bands from 400 nm to 950 nm (UV-vis-NIR region) with absorption maximum centered at 782 nm in thin film. The optical band gap (Eoptg) calculated from the polymer film absorption onset is around 1.37 eV. The π-energy band level (ionization potential) calculated by photoelectron spectroscopy in air (PESA) for PDPPF-TVT is around 5.22 eV. AFM and TEM analyses of the polymer reveal nodular terrace morphology with optimized crystallinity after 200 °C thermal annealing. This polymer exhibits p-channel charge transport characteristics when used as the active semiconductor in organic thin-film transistor (OTFT) devices. The highest hole mobility of 0.13 cm2 V-1 s-1 is achieved in bottom gate and top-contact OTFT devices with on/off ratios in the range of 10 6-107. This work reveals that the replacement of thiophene by furan in DPP copolymers exhibits such a high mobility, which makes DPP furan a promising block for making a wide range of promising polymer semiconductors for broad applications in organic electronics. The Royal Society of Chemistry 2012.

Side-Chain-Induced Rigid Backbone Organization of Polymer Semiconductors through Semifluoroalkyl Side Chains

Kang, Boseok,Kim, Ran,Lee, Seon Baek,Kwon, Soon-Ki,Kim, Yun-Hi,Cho, Kilwon

supporting information, p. 3679 - 3686 (2016/04/09)

While high-mobility p-type conjugated polymers have been widely reported, high-mobility n-type conjugated polymers are still rare. In the present work, we designed semifluorinated alkyl side chains and introduced them into naphthalene diimide-based polymers (PNDIF-T2 and PNDIF-TVT). We found that the strong self-organization of these side chains induced a high degree of order in the attached polymer backbones by forming a superstructure composed of "backbone crystals" and "side-chain crystals". This phenomenon was shown to greatly enhance the ordering along the backbone direction, and the resulting polymers thus exhibited unipolar n-channel transport in field-effect transistors with remarkably high electron mobility values of up to 6.50 cm2 V-1 s-1 and with a high on-off current ratio of 105.

Novel electron acceptor -donor-acceptor Naphthalene diimide compound and organic electronic device that contains it

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Paragraph 0060-0062, (2016/11/24)

The present invention relates to an organic semiconductor compound used for manufacturing a novel naphthalene diimide derivative compound in which an electron donor compound is inserted between two naphthalene diimides. Also, a compound is manufactured by synthesizing the organic semiconductor compound of the present invention and substituted or unsubstituted thiophene including a naphthalene diimide derivative and sulfur (S) and accordingly shows a low band gap and, therefore an organic electronic device including the same has a high efficiency. Also, the organic semiconductor compound in the present invention has outstanding thermal stability and physical properties as well as a high interaction between molecules and can be accordingly used as organic semiconductor materials with a high electrical property. The organic semiconductor compound in the present invention can be used in various organic electron devices including an organic thin-film transistor.

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