50926-11-9

Basic information

• Product Name: INDIUM TIN OXIDE
• Synonyms: ITO;INDIUM TIN OXIDE;INDIUM TIN OXIDE COATED PET SHEET, 35 OHM/SQ SURFACE RESISTIVITY (1EA=1FT X 1FT, 5EA = 5 X 1FT X 1FT);Indium tin oxide coated glass slide, 15-25 O/sq surface resistivity;INDIUM TIN OXIDE COATED PET SHEET, 100 OHM/SQ SURFACE RESISTIVITY (1EA=1FT X 1FT, 5EA = 5 X 1FT X 1FT);Indium tin oxide coated glass slide, 30-60 O/sq surface resistivity;Indium tin oxide coated glass slide, 70-100 omega/sq surface resistivity;INDIUM TIN OXIDE, NANOPOWDER,
• CAS NO: 50926-11-9
• Molecular Formula: In2O5Sn
• Molecular Weight: 428.34
• Mol File: 50926-11-9.mol
• Article Data: 1

Chemical Properties

• Melting Point: 287℃
• Boiling Point: 82 °C
• Flash Point: 57.2 °F
• Appearance: Yellow-green/nanopowder
• Density: 1.2 g/mL at 25 °C(lit.)
• Refractive Index: n20/D 1.5290-1.5460(lit.)
• Storage Temp.: ?20°C
• Water Solubility: Insoluble in water.
• CAS DataBase Reference: INDIUM TIN OXIDE(CAS DataBase Reference)
• NIST Chemistry Reference: INDIUM TIN OXIDE(50926-11-9)
• EPA Substance Registry System: INDIUM TIN OXIDE(50926-11-9)

Safety Data

• Hazard Codes: Xi,F
• Statements: 36/37/38-67-11
• Safety Statements: 7-16-24/25-26-36/37-36/37/39
• RIDADR: UN 1219 3/PG 2
• WGK Germany: 3
• TSCA: Yes
• Hazardous Substances Data: 50926-11-9(Hazardous Substances Data)

Usage

General Description

Different sources of media describe the General Description of 50926-11-9 differently. You can refer to the following data:
1. Indium tin oxide (ITO, or tin-doped indium oxide) is a mixture of indium(III) oxide (In2O3) and tin(IV) oxide (SnO2), typically 90% In2O3, 10% SnO2 by weight. In powder form, indium tin oxide (ITO) is yellow-green in color, but it is transparent and colorless when deposited as a thin film at thicknesses of 1000-3000 angstroms. When deposited as a thin film on glass or clear plastic it functions as a transparent electrical conductor. ITO is normally deposited by a physical vapor deposition process such as D.C. magnetron sputtering or electron beam deposition. Less frequently, ITO can be incorporated in inks using an appropriate film-forming polymer resin and solvent system, and deposited by screen printing albeit with lower transparency and conductivity compared to a physical deposition process. Of the various transparent conductive oxides (TCOs), ITO is considered the premium TCO, having superior conductivity and transparency, stability and ease of patterning to form transparent circuitry. ITO is used in a number of display technologies, such as LCD, OLED, plasma, electroluminescent, and electrochromatic displays, as well as in a number of touch screen technologies. Further uses of this versatile material include antistatic indium tin oxide coatings, EMI shielding, photovoltaic solar cells, aircraft windshields, and freezer case glass for demisting. Yet further applications for ITO are as an infrared reflecting coating to reflect heat energy such as in low-E glass and in low-pressure sodium lamps.
2. Indium tin oxide (ITO) is widely used as transparent conducting oxides. Its major characteristics are electrical conductivity, optical transparency and the ease to be deposited as films.

Uses

Different sources of media describe the Uses of 50926-11-9 differently. You can refer to the following data:
1. Indium tin oxide is used as intermediates.
2. Indium tin oxide (ITO) is a transparent conducting oxide (TCO) material that finds applications, LCD, OLEDs, touch screens, solar cells etc.
3. Indium Tin oxide nanoparticles have been investigated for use in the following:transparent electrodes(1)the formation of conductive paper and organic contaminants (2)the formation of transparent conductive oxide films and magnetic nanocomposites(3) electrochromic materials and as well as in biomedical applications(4)

InChI:InChI=1/2In.5O.Sn/q2*+3;5*-2;+4

Relevant articles and documents

Performance of InSnZrO as transparent conductive oxides

InSnZrO thin films were deposited on glass substrates by magnetron sputtering with an indium-tin-oxide (ITO) target and a zirconium target. X-ray diffractometry (XRD), atomic force microscopy (AFM), and transmission electron microscopy (TEM) revealed that InSnZrO thin films had better crystalline structure, larger grain size, and lower surface roughness than ITO thin films. Zr doping markedly improved the optical- electrical characteristics. In comparison with ITO thin films, the resistivity of InSnZrO thin films deposited at room temperature decreased from 6.24 × 10-3 to 2.20 × 10-3 ωcm, and the maximum optical transmittance in the visible range was enhanced from 53.7 to 66.1%. The thin films showed an obvious Burstein-Moss effect with substrate temperature. Moreover, the direct transition model showed a wider optical bandgap of InSnZrO thin films than that of ITO thin films. As a result, InSnZrO thin films prepared by cosputtering revealed better overall properties than traditional ITO thin films.