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Diazidodiphenylsilane, also known as bis(4-azidophenyl)silane or (4-azidophenyl)diphenylsilane, is an organosilicon compound with the chemical formula (C6H4N3)2SiH2. It is a colorless crystalline solid that is sensitive to light and moisture. diazidodiphenylsilane is primarily used as a precursor in the synthesis of various silicon-containing materials, such as silylating agents, and in the preparation of silyl-protected compounds. Due to its reactivity, diazidodiphenylsilane is typically handled under an inert atmosphere and stored away from light and moisture to prevent decomposition.

5599-39-3

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5599-39-3 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 5599-39-3 includes 7 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 4 digits, 5,5,9 and 9 respectively; the second part has 2 digits, 3 and 9 respectively.
Calculate Digit Verification of CAS Registry Number 5599-39:
(6*5)+(5*5)+(4*9)+(3*9)+(2*3)+(1*9)=133
133 % 10 = 3
So 5599-39-3 is a valid CAS Registry Number.
InChI:InChI=1/C12H10N6Si/c13-15-17-19(18-16-14,11-7-3-1-4-8-11)12-9-5-2-6-10-12/h1-10H

5599-39-3SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 17, 2017

Revision Date: Aug 17, 2017

1.Identification

1.1 GHS Product identifier

Product name diazido(diphenyl)silane

1.2 Other means of identification

Product number -
Other names EINECS 227-016-2

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:5599-39-3 SDS

5599-39-3Upstream product

5599-39-3Relevant academic research and scientific papers

An ESR study on structures of a series of silylnitrenes

Itagaki, Yoshiteru,Iseoka, Takashi,Iida, Toshiyuki,Ohshita, Joji,Shiotani, Masaru,Kunai, Atsutaka

, p. 249 - 254 (2007/10/03)

Structures of a series of silylnitrenes formed from silyl azides were investigated by means of ESR. γ-Irradiation and photo-illumination of all the silyl azides resulted in the formation of triplet states even for those having two or three Si-N3 groups in a molecule. ESR spectra of the silylnitrenes exhibited a part of the fine structure at around 820 mT. All the silyl azides studied gave nearly identical D-values (ca. 1.5cm-1) and much larger than those in phenylnitrenes. The results suggested that electron spins are localized in the nitrogen p-orbitals to a large extent and was interpreted in terms of a mono-silane linkage of nitrene, -Si-N:, i.e., interrupting spin delocalization.

Facile preparation of silyl azides with dipolar aprotic solvents

S. Washburne, Stephen,R. Peterson Jr., William

, p. 153 - 156 (2007/10/05)

The reaction of sodium azide with chlorosilanes in hexamethylphosphoric triamide or dimethylformamide at room temperature affords a high yield preparation of silyl azides, e.g. Me3SiN3,Me2Si(N3)2, PhMeSi(N3)2 and Ph2Si(N3)2. For characterization, the azides may be converted to silyphosphiimies, R3Si-N=PPh3.

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