59763-75-6

Basic information

• Product Name: tantalum oxide
• Synonyms: oxygen(2-),tantalum(5+)
• CAS NO: 59763-75-6
• Molecular Formula: O5Ta2
• Molecular Weight: 0
• Mol File: 59763-75-6.mol
• Article Data: 4

Chemical Properties

• Appearance: /
• CAS DataBase Reference: tantalum oxide(CAS DataBase Reference)
• NIST Chemistry Reference: tantalum oxide(59763-75-6)
• EPA Substance Registry System: tantalum oxide(59763-75-6)

Safety Data

• Hazardous Substances Data: 59763-75-6(Hazardous Substances Data)

Usage

Description

Tantalum oxide, also known as tantalum pentoxide, is a chemical compound composed of tantalum and oxygen. It is characterized by its high dielectric constant, insulating properties, and wide bandgap, which make it a valuable material in various technological applications.

Uses

Used in Electronics Industry:
Tantalum oxide is used as a dielectric material in the production of electronic components and capacitors due to its high dielectric constant and insulating properties. This allows for the creation of smaller, more efficient, and higher-capacity capacitors, which are essential for modern electronic devices.
Used in Semiconductor Industry:
Tantalum oxide is used as a material in the semiconductor industry for applications such as photodetectors and sensors. Its wide bandgap makes it suitable for these applications, enabling the development of advanced semiconductor devices with improved performance and sensitivity.
Used in Energy Storage:
Tantalum oxide is being researched for use in solid-state batteries due to its potential to improve energy storage capacity and safety. Its unique electrical and optical properties make it a promising candidate for the development of next-generation energy storage solutions.

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Relevant articles and documents

Tantalum dioxide complexes with dinitrogen. formation and characterization of the side-on and end-on bonded TaO2(NN)x (x = 1-3) complexes

The reaction of tantalum dioxide molecule with dinitrogen has been studied by matrix isolation infrared spectroscopy. The tantalum dioxide molecules produced from laser evaporation of bulk Ta2O5 target reacted with dinitrogen to form the TaO2(η1-NN) x (x = 1-3) complexes on annealing, in which the N2 ligands are end-on bonded to the tantalum metal center. The TaO2(η 1-NN)3 complex decomposed to TaO2(η1-NN) 2 under infrared irradiation. The TaO2(η1- NN)2 and TaO2(η1-NN)3 complexes rearranged to the less stable TaO2(η1NN) (η2-N2) and TaO2((η1-NN) 2(η2-N2) isomers under visible light excitation. Both the mono- and bis-dinitrogen complexes were predicted to have 2A' or 2A1 ground states arising from, the 2A1 ground state of TaO2, whereas the two tridinitrogen complexes were predicted to have 2B2 ground states with C2v, symmetry, which are derived from the 2B1 excited state of TaO2.

Reactions of group V metal atoms with water molecules. Matrix isolation FTIR and quantum chemical studies

Laser-ablated group V metal atoms (V, Nb, Ta) were co-deposited with water molecules in excess argon. The V atoms reacted with water to form the inserted HVOH molecule spontaneously. The Nb atoms reacted with water to form the NbOH2 complex and