84466-08-0

Basic information

• Product Name: 2,6-distyryldithieno[3,2-b:2',3'-d]thiophene
• Synonyms: 2,6-distyryldithieno[3,2-b:2',3'-d]thiophene
• CAS NO: 84466-08-0
• Molecular Weight: 400.589
• Mol File: 84466-08-0.mol

Chemical Properties

• CAS DataBase Reference: 2,6-distyryldithieno[3,2-b:2',3'-d]thiophene(CAS DataBase Reference)
• NIST Chemistry Reference: 2,6-distyryldithieno[3,2-b:2',3'-d]thiophene(84466-08-0)
• EPA Substance Registry System: 2,6-distyryldithieno[3,2-b:2',3'-d]thiophene(84466-08-0)

Safety Data

• Hazardous Substances Data: 84466-08-0(Hazardous Substances Data)

Upstream product

• 67061-69-2 2,6-dibromodithieno[3,2-b:2',3'-d]thiophene 
• 536-74-3 phenylacetylene 

Relevant articles and documents

Synthesis, structures, and properties of fused thiophenes for organic field-effect transistors

A series of fused thiophenes composed of fused a-oligothiophene units as building blocks, end-capped with either styrene or l-pentyl-4-vinylbenzene groups, has been synthesized through Stille coupling reactions. The compounds have been fully characterized by means of 1H NMR spectrometry, high-resolution mass spectrometry, and elemental analysis. The molecules present a trans-trans configuration between their double bonds, which has been verified and confirmed by Fourier-transform infrared spectroscopy and single-crystal X-ray diffraction analysis. The X-ray crystal structures showed π- π overlap and sulfur-sulfur interactions between the adjacent molecules. The decomposition temperatures were all found to be above 300 °C, indicating that compounds of this series possess excellent thermal stability. The fact that no phase transition occurs at low temperature indicates that they should be well-suited for application in devices. Moreover, they possess low HOMO energy levels, based on cyclic voltammetry measurements, and suitable energy gaps, as determined from their thin-film UV/Vis spectra. Thinfilm X-ray diffraction analysis and atomic force microscopy revealed high crystallinity on supporting substrates. In addition, as the substrate temperature has a significant influence on the morphology and the degree of crystallinity, the device performance could be optimized by varying the substrate temperature. These materials were found to exhibit optimal field-effect performance, with a mobility of 0.17 Cm2V-1S-1 and an on/off ratio of 105, at a substrate temperature of 70°C.