84466-16-0Relevant academic research and scientific papers
Synthesis and properties of thieno[3,2-b]thiophene derivatives for application of OFET active layer
Ito, Hiroki,Yamamoto, Tatsuya,Yoshimoto, Noriyuki,Tsushima, Noboru,Muraoka, Hiroki,Ogawa, Satoshi
, p. 25 - 35 (2013/02/25)
A series of thieno[3,2-b]thiophene derivatives having styryl groups were synthesized via short steps and characterized by UV-vis absorption spectra and cyclic voltammetry. Based on these results, we found that the introduction of long chain alkyl groups to the terminal styryl groups leads to narrower HOMO-LUMO gaps and higher HOMO energy levels than the unalkylated styryl substituted molecules. Organic field-effect transistor (OFET) devices using these derivatives as the active layer were fabricated by a vacuum deposition process. It was demonstrated that these devices showed a relatively high hole mobility up to 3.5 × 10-2 cm2/Vs. These devices also showed a good stability, namely their mobilities did not decrease over 100 days in air. Therefore, these facts suggested that the introduction of long-chain alkylated styryl groups is an effective way to improve the hole mobilities in OFETs.
Synthesis, structures, and properties of fused thiophenes for organic field-effect transistors
Liu, Ying,Di, Chong-An,Du, Chunyan,Liu, Yunqi,Lu, Kun,Qiu, Wenfeng,Yu, Gui
experimental part, p. 2231 - 2239 (2010/07/05)
A series of fused thiophenes composed of fused a-oligothiophene units as building blocks, end-capped with either styrene or l-pentyl-4-vinylbenzene groups, has been synthesized through Stille coupling reactions. The compounds have been fully characterized by means of 1H NMR spectrometry, high-resolution mass spectrometry, and elemental analysis. The molecules present a trans-trans configuration between their double bonds, which has been verified and confirmed by Fourier-transform infrared spectroscopy and single-crystal X-ray diffraction analysis. The X-ray crystal structures showed π- π overlap and sulfur-sulfur interactions between the adjacent molecules. The decomposition temperatures were all found to be above 300 °C, indicating that compounds of this series possess excellent thermal stability. The fact that no phase transition occurs at low temperature indicates that they should be well-suited for application in devices. Moreover, they possess low HOMO energy levels, based on cyclic voltammetry measurements, and suitable energy gaps, as determined from their thin-film UV/Vis spectra. Thinfilm X-ray diffraction analysis and atomic force microscopy revealed high crystallinity on supporting substrates. In addition, as the substrate temperature has a significant influence on the morphology and the degree of crystallinity, the device performance could be optimized by varying the substrate temperature. These materials were found to exhibit optimal field-effect performance, with a mobility of 0.17 Cm2V-1S-1 and an on/off ratio of 105, at a substrate temperature of 70°C.
