853234-57-8Relevant articles and documents
Ultralow bandgap molecular semiconductors for ambient-stable and solution-processable ambipolar organic field-effect transistors and inverters
Ozdemir, Resul,Choi, Donghee,Ozdemir, Mehmet,Kwon, Guhyun,Kim, Hyekyoung,Sen, Unal,Kim, Choongik,Usta, Hakan
, p. 2368 - 2379 (2017/03/14)
The design and development of novel ambipolar semiconductors is very crucial to advance various optoelectronic technologies including organic complementary (CMOS) integrated circuits. Although numerous high-performance ambipolar polymers have been realized to date, small molecules have been unable to provide high ambipolar performance in combination with ambient-stability and solution-processibility. In this study, by implementing highly π-electron deficient, ladder-type IFDK/IFDM acceptor cores with bithiophene donor units in D-A-D π-architectures, two novel small molecules, 2OD-TTIFDK and 2OD-TTIFDM, were designed, synthesized and characterized in order to achieve ultralow band-gap (1.21-1.65 eV) semiconductors with sufficiently balanced molecular energetics for ambipolarity. The HOMO/LUMO energies of the new semiconductors are found to be ?5.47/?3.61 and ?5.49/?4.23 eV, respectively. Bottom-gate/top-contact OFETs fabricated via solution-shearing of 2OD-TTIFDM yield perfectly ambient stable ambipolar devices with reasonably balanced electron and hole mobilities of 0.13 cm2 V?1 s?1 and 0.01 cm2 V?1 s?1, respectively with Ion/Ioff ratios of ～103-104, and 2OD-TTIFDK-based OFETs exhibit ambipolarity under vacuum with highly balanced (μe/μh ～ 2) electron and hole mobilities of 0.02 cm2 V?1 s?1 and 0.01 cm2 V?1 s?1, respectively with Ion/Ioff ratios of ～105-106. Furthermore, complementary-like inverter circuits were demonstrated with the current ambipolar semiconductors resulting in high voltage gains of up to 80. Our findings clearly indicate that ambient-stability of ambipolar semiconductors is a function of molecular orbital energetics without being directly related to a bulk π-backbone structure. To the best of our knowledge, considering the processing, charge-transport and inverter characteristics, the current semiconductors stand out among the best performing ambipolar small molecules in the OFET and CMOS-like circuit literature. Our results provide an efficient approach in designing ultralow band-gap ambipolar small molecules with good solution-processibility and ambient-stability for various optoelectronic technologies, including CMOS-like integrated circuits.
Conjugated monomers and polymers and preparation and use thereof
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, (2009/07/02)
Disclosed are new conjugated compounds (e.g., monomers and polymers) that include ladder-type moieties which can be used for preparing semiconducting materials. Such conjugated compounds can exhibit high n-type carrier mobility and/or good current modulat
Design, synthesis, and characterization of ladder-type molecules and polymers. air-stable, solution-processable n-channel and ambipolar semiconductors for thin-film transistors via experiment and theory
Usta, Hakan,Risko, Chad,Wang, Zhiming,Huang, Hui,Deliomeroglu, Murat K.,et al.
supporting information; experimental part, p. 5586 - 5608 (2009/09/25)
The design, synthesis, and characterization of new high-performance n-channel molecular/ polymeric semiconductors that are solution-processable and air-stable is of great interest for the development of p - n junctions, bipolar transistors, and organic co
