870106-48-2

Basic information

• Product Name: erbium (III) tris(8-hydroxyquinoline)
• CAS NO: 870106-48-2
• Molecular Weight: 599.718
• Mol File: 870106-48-2.mol

Chemical Properties

• CAS DataBase Reference: erbium (III) tris(8-hydroxyquinoline)(CAS DataBase Reference)
• NIST Chemistry Reference: erbium (III) tris(8-hydroxyquinoline)(870106-48-2)
• EPA Substance Registry System: erbium (III) tris(8-hydroxyquinoline)(870106-48-2)

Safety Data

• Hazardous Substances Data: 870106-48-2(Hazardous Substances Data)

Upstream product

• 148-24-3 8-quinolinol 
• 10138-41-7 erbium(III) chloride 

Relevant articles and documents

1.54 μm electroluminescence from erbium (III) tris(8-hydroxyquinoline) (ErQ)-based organic light-emitting diodes

A 1.54 μm room temperature electroluminescence from organic light emitting diodes (OLED) using ErQ as the emitting layer is demonstrated. The possibility of a route producing a silicon based organic light emitting diode operating at this wavelength is highlighted. Some preliminary measurements of electroluminescence intensity against drive current were also performed.

Synthesis and near infrared luminescence properties of a series of lanthanide complexes with POSS modified ligands

A polyhedral oligomeric silsesquioxanes (POSS) modified 8-hydroxyquinoline derivative (denoted as Q-POSS) was synthesized and used as a ligand to coordinate with lanthanide ions to obtain a series of lanthanide complexes Ln(Q-POSS)3 (Ln = Er3+, Yb3+, Nd3+). The as-prepared lanthanide complexes have been characterized by FT-IR, UV–Vis, and elemental analysis. All these complexes showed the characteristic near-infrared (NIR) luminescence originated from the corresponding lanthanide ions under excitation. Compared with the unmodified counterparts LnQ3 (HQ = 8-hydroxyquinoline), the Ln(Q-POSS)3 complexes showed obviously increased emission intensity, which was ascribed mainly to the steric-hindrance effects of the POSS moiety in the ligands. It is believed that the POSS group could suppress undesired excimer formation and intermolecular aggregation, thus decreasing the concentration quenching effect of the corresponding lanthanide complexes.

Efficient 1.54 μm light emitting diode with nanometer thick polycrystalline Si anode and organic sandwich structure

This letter reports that the 1.54 μm electroluminescence efficiency of the organic light emitting diode (OLED) with a structure of nanometer thick polycrystalline silicon (NTPS)/NPB/ErQ/AlQ/Al is two orders of magnitude higher than that of the OLED with a structure of thick crystalline silicon/NPB/ErQ/Al, which is similar to the OLED reported in literature [Curry et al., Appl. Phys. Lett. 77, 2271 (2000)]. Such an improvement is mainly attributed to the fact that hole injection is controlled by NTPS anode and holes are blocked by AlQ to match electron injection, and a higher light out coupling as well.