920-35-4 Usage
Uses
Used in Plastics and Polymers Industry:
1-Propene, 3-fluoro-2-methylis used as a monomer for the production of plastics, synthetic rubbers, and other polymers due to its ability to undergo polymerization reactions, contributing to the formation of versatile materials with diverse applications.
Used in Organic Chemical Syntheses:
1-Propene, 3-fluoro-2-methylis used as a building block in various organic chemical syntheses for the creation of a wide range of compounds, including pharmaceuticals, agrochemicals, and specialty chemicals, due to its reactive nature and the presence of the fluorine atom.
Synthesis Methods:
1-Propene, 3-fluoro-2-methylcan be synthesized through two primary methods:
1. The reaction of 3-methyl-1-butene with hydrofluoric acid, which allows for the introduction of the fluorine atom into the molecule.
2. The chlorination of isobutane followed by fluorination, which involves the initial substitution of hydrogen atoms with chlorine and subsequent replacement with fluorine atoms.
Safety Precautions:
It is important to handle 1-Propene, 3-fluoro-2-methylwith care, as it can be harmful if inhaled or comes into contact with the skin or eyes. Proper safety measures, including the use of personal protective equipment and handling in well-ventilated areas, should be taken to minimize potential health risks.
Check Digit Verification of cas no
The CAS Registry Mumber 920-35-4 includes 6 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 3 digits, 9,2 and 0 respectively; the second part has 2 digits, 3 and 5 respectively.
Calculate Digit Verification of CAS Registry Number 920-35:
(5*9)+(4*2)+(3*0)+(2*3)+(1*5)=64
64 % 10 = 4
So 920-35-4 is a valid CAS Registry Number.
920-35-4Relevant academic research and scientific papers
PLASMA ETCHING GAS AND PLASMA ETCHING METHOD
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Page/Page column, (2014/10/29)
The present invention is an etching gas comprising an unsaturated fluorohydrocarbon represented by CxHyFz (wherein x=3, 4, or 5, y+z≦2x, and y>z) and a method comprising selectively etching a silicon nitride film relative to a silicon oxide film or a silicon film using the etching gas. According to the present invention, a silicon nitride film stacked on a silicon oxide film or a silicon film can be highly selectively etched.
Fluorine shifts in gaseous cations. Analogues of Wagner-Meerwein rearrangements
Shaler, Thomas A.,Morton, Thomas Hellman
, p. 9222 - 9226 (2007/10/02)
In the gas phase ionized (CH3)2CFCH2OPh (where the asterisk designates a 13C-label) decomposes to yield ionized phenol via two competing pathways, both of which pass through intermediate ion-neutral complexes. One pathway involves methyl shift, which produces complexes that contain 2-fluorobutyl cations. The other pathway involves fluorine transposition, which forms complexes containing fluoro-tert-butyl cations. The distribution of 13C in the recovered neutral fluoroalkenes confirms that fluorine migration has indeed taken place, and SCF computations point toward a bridged, three-member cyclic transition state. Ab initio calculations provide an ordering of C4H8F+ structures, some of which are isoelectronic with C4H8O epoxy and carbonyl compounds, as well as those that have no stable isoelectronic neutral counterparts.
