956135-66-3Relevant academic research and scientific papers
Method for producing organic field-effect transistors
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Page/Page column 36-37, (2011/04/18)
A method for producing an organic field-effect transistor, comprising the steps of: a) providing a substrate comprising a gate structure, a source electrode and a drain electrode located on the substrate, andb) applying an n-type organic semiconducting compound to the area of the substrate where the gate structure, the source electrode and the drain electrode are located, wherein the n-type organic semiconducting compound is selected from the group consisting of compounds of the formula I wherein R1, R2, R3and R4are independently hydrogen, chlorine or bromine, with the proviso that at least one of these radicals is not hydrogen,Y1 is O or NRa, wherein Ra is hydrogen or an organyl residue,Y2 is O or NRb, wherein Rb is hydrogen or an organyl residue,Z1, Z2, Z3 and Z4 are O, where, in the case that Y1 is NRa, one of the residues Z1 and Z2 may be a NRc group, where Ra and Rc together are a bridging group having 2 to 5 atoms between the terminal bonds, where, in the case that Y2 is NRb, one of the residues Z3 and Z4 may be a NRd group, where Rb and Rd together are a bridging group having 2 to 5 atoms between the terminal bonds.
DIIMIDE-BASED SEMICONDUCTOR MATERIALS AND METHODS OF PREPARING AND USING THE SAME
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Page/Page column 52-53, (2008/12/05)
Diimide-based semiconductor materials are provided with processes for preparing the same. Composites and electronic devices including the diimide-based semiconductor materials also are provided.
