peltier element bismuth telluride N/P type Bi2Te3 CAS NO. 1304-82-1

Min.Order Quantity:: 0 Metric Ton

Purity:: 99.99%

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Keywords

ismuth telluride N/P
Bi2Te3 N/P
peltier

Quick Details

ProName: peltier element bismuth telluride N/P ...
CasNo: 1304-82-1
Molecular Formula: Bi2Te3
Appearance: grey pellet
Application: peltier
PackAge: 25kg/bag/drum
ProductionCapacity: Metric Ton/Day
Purity: 99.99%
Storage: cool and dry
Transportation: by sea, by air
LimitNum: 0 Metric Ton
Grade: Industrial Grade

Superiority

p-type ingot:
1. purity: 99.99% 2. thermal conductivity (k): 1.2-1.6w/m.k 3. seebeck (s) : 200-230 uv 4. electrical conductivity (rou): 850-1250 5. figure of merit (z): 2.55- 3.4×10-3.k-1. 6. zt>=1.1@300k
n-type ingot:
1. purity: 99.99% 2. thermal conductivity (k): 1.2-1.6w/m.k 3. seebeck (s) : 205-235 uv 4. electrical conductivity (rou): 850-1250 5. figure of merit (z): 2.34-3.2×10-3. k-1. 6. zt>=1.1@300k

p-type ingot:

1. purity: 99.99%

2. thermal conductivity (k): 1.2-1.6w/m.k

3. seebeck (s) : 200-230 uv

4. electrical conductivity (rou): 850-1250

5. figure of merit (z): 2.55- 3.4×10-3.k-1.

6. zt>=1.1@300k

n-type ingot:

1. purity: 99.99%

2. thermal conductivity (k): 1.2-1.6w/m.k

3. seebeck (s) : 205-235 uv

4. electrical conductivity (rou): 850-1250

5. figure of merit (z): 2.34-3.2×10-3. k-1.

6. zt>=1.1@300k

Details

characteristics:	bismuth telluride is a compound of tellurium and bismuth. when alloyed with selenium or antimony, it acts as an efficient thermoelectric material suitable for portable power generation or refrigeration. it is a narrow gap layered semiconductor with a trigonal unit cell. it mainly occurs in a rare mineral tellurobismuthite. it is produced by sealing bismuth and tellurium metals in a quartz tube under vacuum.
applications:	bismuth telluride finds applications in the following: power generation or cooling applications topological insulators.

characteristics:

bismuth telluride is a compound of tellurium and bismuth. when alloyed with selenium or antimony, it acts as an efficient thermoelectric material suitable for portable power generation or refrigeration. it is a narrow gap layered semiconductor with a trigonal unit cell. it mainly occurs in a rare mineral tellurobismuthite. it is produced by sealing bismuth and tellurium metals in a quartz tube under vacuum.