GALLIUM PHOSPHIDE

Base Information

• Chemical Name: GALLIUM PHOSPHIDE
• CAS No.: 12063-98-8
• Deprecated CAS: 2395838-74-9
• Molecular Formula: GaP
• Molecular Weight: 100.697
• European Community (EC) Number: 235-057-2
• UNII: 3J421F73DV
• DSSTox Substance ID: DTXSID60894184
• Wikipedia: Gallium phosphide,Gallium_phosphide
• Wikidata: Q421416
• Mol file: 12063-98-8.mol

Synonyms:Galliummonophosphide;Gallium monophosphide (GaP);Gallium phosphide;

Chemical Property of GALLIUM PHOSPHIDE

Chemical Property:

• Melting Point: 1480 °C
• Refractive Index: 2.9
• Flash Point: 230 °F
• PSA: 0.00000
• Density: 4.13 g/cm³
• LogP: 0.70540
• Water Solubility.: Insoluble in water.
• Hydrogen Bond Donor Count: 0
• Hydrogen Bond Acceptor Count: 0
• Rotatable Bond Count: 0
• Exact Mass: 99.89934
• Heavy Atom Count: 2
• Complexity: 10

Purity/Quality:

98%,99%, ^*data from raw suppliers

Gallium phosphide (99.999%-Ga) PURATREM ^*data from reagent suppliers

Safty Information:

• Pictogram(s): Xi
• Hazard Codes: Xi
• Statements: 36/37
• Safety Statements: 26

MSDS Files:

SDS file from LookChem

Useful:

• Chemical Classes: Metals -> Phosphides
• Canonical SMILES: P#[Ga]
• Physical properties: Pale orange to yellow transparent cubic crystals or long whiskers; lattice constant 5.450?; density 4.138 g/cm3; melts at 1,477°C; dielectric constant 8.4; electroluminescent in visible light.
• Uses: Galllium phosphide (GaP) is a light-colored highly pure crystal form used as “whiskers” and crystals in semiconductor devices. Gallium phosphide (GaP) is used in semiconductor devices, and in the manufacture of light-emitting diodes (LEDs) doped with other elements or in combination with gallium arsenide phosphide. With appropriate dopants, p-type and n-type semiconductors can be produced. It is used in optical systems.

Technology Process of GALLIUM PHOSPHIDE

There total 39 articles about GALLIUM PHOSPHIDE which guide to synthetic route it. The literature collected by LookChem mainly comes from the sharing of users and the free literature resources found by Internet computing technology. We keep the original model of the professional version of literature to make it easier and faster for users to retrieve and use. At the same time, we analyze and calculate the most feasible synthesis route with the highest yield for your reference as below:

synthetic route:

Reference yield: 90.0%

gallium(III) oxide + phosphorus (12185-10-3) → gallium phosphide (12063-98-8)

Guidance literature:

With I₂; alkali; In water; byproducts: H3PO4, I(1-); reaction of P4, Ga2O3, I2, alkali in aq. soln. at 120-160°C;

DOI:10.1039/b210164e

Reference yield: 87.0%

phosphorous + Gallium trichloride (13450-90-3) + sodium (7440-23-5) → gallium phosphide (12063-98-8)

Guidance literature:

In benzene; High Pressure; Na, P, GaCl3 were mixed in benzene, added to autoclave, N2 was bubbled, sealed, heated to 240 and 300°C for 6 h, cooled to room temp.; filtered, washed with EtOH, aq. HCl, water, dried at 80°C under vac. for 5 h;

DOI:10.1021/ic010431y

Reference yield: 1.0%

gallium (7440-55-3) + niobium + phosphorus + barium (7440-39-3) → gallium phosphide (12063-98-8) + barium phosphide + niobium monophosphide (12034-66-1)

Guidance literature:

In neat (no solvent, solid phase); react. Ba:Ga:P (1:2:2) in sealed Nb tube;

DOI:10.1021/ic100940b

upstream raw materials:

phosphan

gallium

phosphorus trichloride

tris(di-tert-butyphosphino)gallane

Downstream raw materials:

phosporus oxide

phosphorus dioxide

P₄O₂

manganese phosphide

Refernces

• 1、 Graugnard,Chawla,Lorang,Summers. "High filling fraction gallium phosphide inverse opals by atomic layer deposition". . . Retrieved 2006.
• 2、 Gao, Shanmin,Xie, Yi,Lu, Jun,Du, Guoan,He, Wei,Cui, Deliang,Huang, Baibiao,Jiang, Minhua. "Mild benzene-thermal route to GaP nanorods and nanospheres". . p. 1850 - 1854. Retrieved 2002.
• 3、 Jouet, Richard J.,Wells, Richard L.,Rheingold, Arnold L.,Incarvito, Christopher D.. "Synthesis and characterization of single-source precursors to nanocrystalline GaP, GaPxAs1-x, and GaPxSb1-x. X-ray crystal structures of [Et2GaP(SiMe3)2]2, (Me3Si)2P[μ-GaEt2]2As(SiMe 3)2". . p. 191 - 198. Retrieved 2000.
• 4、 Furis, Madalina,Sahoo, Yudhisthira,MacRae, David J.,Manciu, Felicia S.,Cartwright, Alexander N.,Prasad, Paras N.. "Surfactant-imposed interference in the optical characterization of GaP nanocrystals". . p. 11622 - 11625. Retrieved 2003.
• 5、 Asahi, Hajime,Asami, Kumiko,Watanabe, Tetsuya,Yu, Soon Jae,Kaneko, Tadaaki,et al.. "". . p. 1407 - 1409. Retrieved 1991.
• 6、 Chen, Luyang,Luo, Tao,Huang, Mingxing,Gu, Yunle,Shi, Liang,Qian, Yitai. "A mild reduction-phosphidation approach to nanocrystalline GaP". . p. 667 - 671. Retrieved 2004.
• 7、 Wang, Anjie,Qin, Minglei,Guan, Jie,Wang, Li,Guo, Hongchen,Li, Xiang,Wang, Yao,Prins, Roel,Hu, Yongkang. "The synthesis of metal phosphides: Reduction of oxide precursors in a hydrogen plasma". . p. 6052 - 6054. Retrieved 2008.
• 8、 Solanki, R.,Sudarsan, U.,Johnson, J. C.. "". . p. 919 - 921. Retrieved 1988.
• 9、 Wang, Junli,Yang, Qing. "A developed Ullmann reaction to III-V semiconductor nanocrystals in sealed vacuum tubes". . p. 6060 - 6066. Retrieved 2008.
• 10、 Kim, Yong-Ho,Jun, Young-wook,Jun, Byung-Ho,Lee, Sang-Min,Cheon, Jinwoo. "Sterically induced shape and crystalline phase control of GaP nanocrystals". . p. 13656 - 13657. Retrieved 2002.