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| Name |
Tungsten silicide |
EINECS | N/A |
| CAS No. | 12627-41-7 | Density | N/A |
| PSA | N/A | LogP | N/A |
| Solubility | N/A | Melting Point |
N/A |
| Formula | H4SiW | Boiling Point | N/A |
| Molecular Weight | 215.96 | Flash Point | N/A |
| Transport Information | N/A | Appearance | N/A |
| Safety | Risk Codes | N/A | |
| Molecular Structure |
|
Hazard Symbols | N/A |
| Synonyms |
N/A |
Tungsten silicide Chemical Properties
Systematic Name: Tungsten silicide
Molecular Formula: Si . W
Tungsten silicide (CAS NO.12627-41-7) is composed of two substances,so the molecular structure of it is:
Tungsten silicide Specification
A semiconductor manufacturing process for depositing a tungsten silicide film on a substrate includes deposition of a Tungsten silicide nucleation layer on the substrate using a (CVD) process with a silane source gas followed by deposition of the Tungsten silicide film with a dichlorosilane source gas. This two step process allows dichlorosilane to be used as a silicon source gas for depositing a Tungsten silicide film at a lower temperature than would otherwise by possible and without plasma enhancement. Tungsten silicide (CAS NO.12627-41-7) films deposited by this process are characterized by low impurities, good step coverage, and low stress with the silicon substrate.
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