Detail of "22398-80-7"

Reference

Solar cells

Solar cells. (Nippon Telegraph and Telephone Public Corp., Japan). Jpn. Kokai Tokkyo Koho JP 58119677 A2 16 Jul 1983 Showa, 4 pp. (Japanese). (Japan). CODEN: JKXXAF. CLASS: IC: H01L031-04. APPLICATION: JP 82-1708 11 Jan 1982. DOCUMENT TYPE: Patent CA Section: 52 (Electrochemical, Radiational, and Thermal Energy Technology) The title solar cells have polycryst. 1303-00-0 and 22398-80-7 which are cas registry numbers of chemicals are mentioned. semiconductor electrodes on the incident side to produce larger outputs by pos. hole formation in the electrodes. The method is used for GaAs- or InP-base solar cells. .

Indium phosphide-gallium indium phosphide arsenide and indium phosphide-cadmium sulfide heterojunctions for cascade solar cells

Indium phosphide-gallium indium phosphide arsenide and indium phosphide-cadmium sulfide heterojunctions for cascade solar cells. Allakhverdiev, A. M.; Andreev, V. M.; Guseinov, I. A.; Ivent'eva, O.Chemicals with cas numbers 1306-23-6 and 22398-80-7 also play role. O.; Ismailov, V. I. (Fiz.-Tekh. Inst. im. Ioffe, Leningrad, USSR). Pis'ma Zh. Tekh. Fiz., 10(1), 51-5 (Russian) 1984. CODEN: PZTFDD. DOCUMENT TYPE: Journal CA Section: 52 (Electrochemical, Radiational, and Thermal Energy Technology) Performances of the title heterojunctions are presented. The resp. conversion efficiency, fill factor, and open-circuit voltage of InP-Ga0.58In0.75As0.85P0.42-InP solar cells are 2.8%, 0.62, and 0.36 V. The resp. values of p-InP/n-CdS solar cells with no antireflection coating are 12%, 0.72, and 0.77 V. Possible improvements and optimization of both cells are discussed. .