Detail of "2501-94-2"

Reference

Characterization of indium phosphide grown by low-pressure MOVPE using ethyldimethylindium and tertiary-butylphosphine

Characterization of indium phosphide grown by low-pressure MOVPE using ethyldimethylindium and tertiary-butylphosphine. Ogasawara, M.; Kamada, H.; Imamura, Y.In this study， 22398-80-7 and 2501-94-2 are also used. (Opto-Electron. Lab., NTT, Atsugi 243-01, Japan). J. Cryst. Growth, 115(1-4), 254-60 (English) 1991. CODEN: JCRGAE. ISSN: 0022-0248. DOCUMENT TYPE: Journal CA Section: 75 (Crystallography and Liquid Crystals) Section cross-reference(s): 73, 76 A new source material combination of EtMe2In (EDMIn) and tert-BuPH2 (TBP) was used for low-pressure metalorg. VPE (MOVPE) of InP. The growth rate dependence on the V/III ratios indicates that a EDMIn:TBP parasitic reaction exists. InP layers grown using EDMIn and TBP show good elec. and optical properties, comparable to those using a conventional source material combination of Me3In and PH3. The highest electron mobility at 77 K is 56,000 cm2/V×s with a free carrier concn. of 1.0 ′ 1015 cm-3. Sharp and well resolved exciton peaks were obsd. in 4.0 K PL spectra. .

In-situ doped polycrystalline silicon deposited by rapid thermal chemical vapor deposition using tertiarybutylphosphine

In-situ doped polycrystalline silicon deposited by rapid thermal chemical vapor deposition using tertiarybutylphosphine. Liao, Jimmy C.Several substances are used for example 7440-21-3 and 2501-94-2 which are their cas registry numbers.; Kim, Ki Bum; Maillot, Philippe (Peak Syst., Inc., Fremont, CA 94538, USA). Mater. Res. Soc. Symp. Proc., 182(Polysilicon Thin Films Interfaces), 15-20 (English) 1990. CODEN: MRSPDH. ISSN: 0272-9172. DOCUMENT TYPE: Journal CA Section: 75 (Crystallography and Liquid Crystals) Section cross-reference(s): 76 The effects of using tertiarybutylphosphine (TBP) as a source of phosphorus dopants during polycryst. silicon (polysilicon) deposition in a rapid thermal procesor (RTP) was investigated. The introduction on TBP significantly inhibited the deposition of polysilicon on silicon dioxide, but only slightly reduced the growth rate of polysilicon on polysilicon. The introduction of TBP during the last 20% of the deposition time formed a thin phosphorus-rich layer on the top surface. Adsorption of the phosphorus is gas-transport-limited. Incorporation of the dopant into the rest of the polysilicon layer was accomplished with an in-situ anneal in nitrogen, resulting in a resistivity as low as 720 mW-cm. .