Reference

Fundamental analysis of defects induced by energetic ion implantation in silver chloride

Fundamental analysis of defects induced by energetic ion implantation in silver chloride. Gisclon, J. L.; Jal, J. F.; Dupuy, J. (Dep. Phys. Mater., Univ. Claude Bernard, Villeurbanne, Fr.). Radiat. Eff., 34(1-2-3), 35-42 (English) 1977. CODEN: RAEFBL. DOCUMENT TYPE: Journal CA Section: 71 (Nuclear Technology) Section cross-reference(s): 74, 73, 75 The effects of energetic ion implantation in AgCl [7783-90-6] can be related to 2 types of perturbations due to: the electronic energy losses obsd., essentially with H+ (2 MeV) implantation, and the collision energy losses illustrated in K+ (0.5 MeV) implantation. The ionization influence is essentially the sensibilization of AgCl (print-out) at RT and Ln T. The photolysis mechanism discussed is the one postulated under action of light. The defects related to collision losses are characterized by a new optical absorption band with a characteristic length independent of the implanted ion (Na+ and K+). The nature of these defects are analyzed by using thermal and optical bleaching and EPR methods. These collision effects do not contribute to the print-out phenomena.

Properties of silver chloride track detectors

Properties of silver chloride track detectors. Dmitriev, V. D.; Kocherov, N. P.; Novikova, N. R.; Perfilov, N. A. (Radievyi Inst., Leningrad, USSR). Report, AED-Conf-76-421-037, 3 pp. Avail. INIS From: INIS Atomindex 1977, 8(8), Abstr. No. 301906 (English) 1976. DOCUMENT TYPE: Report CA Section: 71 (Nuclear Technology) The expts. on prepn. of AgCl [7783-90-6] track detectors and their properties are described. The results of x-ray structural anal. and data on sensitivity to charged particles and actinic light of AgCl crystals, doped with several elements, are presented.