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15112-89-7

15112-89-7

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15112-89-7 Usage

Uses

Tris(dimethylamino)silane (TDMAS) is used as an organosilicon source for the deposition of Si oxynitride; carbonitride; nitride and oxide thin films. It is also used to form multicomponent silicon containing thin films. The depositions can be carried out at low substrate temperatures (<150). The melting point and vapor pressure of TDMAS is in a suitable working range; thus making it a very good vapor deposition precursor.

General Description

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Check Digit Verification of cas no

The CAS Registry Mumber 15112-89-7 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,5,1,1 and 2 respectively; the second part has 2 digits, 8 and 9 respectively.
Calculate Digit Verification of CAS Registry Number 15112-89:
(7*1)+(6*5)+(5*1)+(4*1)+(3*2)+(2*8)+(1*9)=77
77 % 10 = 7
So 15112-89-7 is a valid CAS Registry Number.
InChI:InChI=1/C6H18N3Si/c1-7(2)10(8(3)4)9(5)6/h1-6H3

15112-89-7 Well-known Company Product Price

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  • Aldrich

  • (570133)  Tris(dimethylamino)silane  electronic grade, 99.999%

  • 15112-89-7

  • 570133-25G

  • 1,918.80CNY

  • Detail

  • Aldrich

  • (759562)  Tris(dimethylamino)silane  packaged for use in deposition systems

  • 15112-89-7

  • 759562-25G

  • 10,500.75CNY

  • Detail

15112-89-7SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 19, 2017

Revision Date: Aug 19, 2017

1.Identification

1.1 GHS Product identifier

Product name TRIS(DIMETHYLAMINO)SILANE

1.2 Other means of identification

Product number -
Other names Tris(dimethylamido)silane

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:15112-89-7 SDS

15112-89-7Related news

Atomic layer deposition of SiO2 from Tris(dimethylamino)silane and ozone by using temperature-controlled water vapor treatment07/25/2019

Atomic layer deposition of SiO2 from tris(dimethylamino)silane (TDMAS) and ozone as precursors on Si(100) surfaces at near-room temperatures was studied by infrared absorption spectroscopy with a multiple internal reflection geometry. TDMAS can be adsorbed at OH sites on hydroxylated Si surfaces...detailed

Non-heating atomic layer deposition of SiO2 using tris(dimethylamino)silane and plasma-excited water vapor07/24/2019

Non-heating atomic layer deposition of SiO2 is developed using tris(dimethylamino)silane (TDMAS) and plasma-excited water vapor. The plasma-excited water is effective in oxidizing the TDMAS-adsorbed SiO2 surface while leaving OH sites on the growing surface at room temperature for further TDMAS ...detailed

15112-89-7Relevant articles and documents

Aylett,Peterson

, p. 3429,3430-3432 (1964)

METHOD FOR PRODUCING DIALKYLAMINOSILANE

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Paragraph 0076-0078, (2020/05/06)

A method for safely and efficiently producing high-purity dialkylaminosilane. Dialkylamine is fed simultaneously during feeding chlorosilane in the presence of metal to cause reaction. For example, chlorosilane and dialkylamine are fed, and then only dialkylamine is fed to cause reaction, whereby dialkylaminosilane is produced.

1,1,1-TRIS(ORGANOAMINO)DISILANE COMPOUNDS AND METHOD OF PREPARING SAME

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Paragraph 0096-0097, (2019/02/15)

A 1,1,1-tris(organoamino)disilane compound and a method of preparing the 1,1,1-tris(organoamino)disilane compound are disclosed. The method comprises aminating a 1,1,1-trihalodisilane with an aminating agent comprising an organoamine compound to give a reaction product comprising the 1,1,1-tris(organoamino)disilane compound, thereby preparing the 1,1,1-tris(organoamino)disilane compound. A film-forming composition is also disclosed. The film-forming composition comprises the 1,1,1-tris(organoamino)disilane compound. A film formed with the film-forming composition, and a method of forming the film, are also disclosed. The method of forming the film comprises subjecting the film-forming composition comprising the 1,1,1-tris(organoamino)disilane compound to a deposition condition in the presence of a substrate, thereby forming the film on the substrate.

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