4142-85-2

Basic information

• Product Name: BIS(TRICHLOROSILYL)METHANE
• Synonyms: 1,1,1,3,3,3-hexachloro-1,3-disilapropane;bis-trichlorosilanyl-methane;BIS(TRICHLOROSILYL)METHANE
• CAS NO: 4142-85-2
• Molecular Formula: CH₂Cl₆Si₂
• Molecular Weight: 282.92
• Product Categories: Self Assembly&Contact Printing;Self-Assembly Materials;Silane Coupling Agents/Adhesion Promoters;SilanesSelf Assembly&Contact Printing;Trichlorosilanes
• Mol File: 4142-85-2.mol
• Article Data: 24

Chemical Properties

• Boiling Point: 179-180 °C(lit.)
• Flash Point: >221 °F
• Appearance: /
• Density: 1.545 g/mL at 25 °C(lit.)
• Vapor Pressure: 6.25mmHg at 25°C
• Refractive Index: n20/D 1.468(lit.)
• CAS DataBase Reference: BIS(TRICHLOROSILYL)METHANE(CAS DataBase Reference)
• NIST Chemistry Reference: BIS(TRICHLOROSILYL)METHANE(4142-85-2)
• EPA Substance Registry System: BIS(TRICHLOROSILYL)METHANE(4142-85-2)

Safety Data

• Hazard Codes: C
• Statements: 14/15-34
• Safety Statements: 26-36/37/39-43-45-7/8
• RIDADR: UN 3094 8/PG 2
• WGK Germany: 3
• TSCA: No
• Hazardous Substances Data: 4142-85-2(Hazardous Substances Data)

Usage

General Description

BIS(TRICHLOROSILYL)METHANE is a chemical compound with the formula (Cl3Si)2CH2. It is a colorless, odorless liquid that is highly flammable and reactive. BIS(TRICHLOROSILYL)METHANE is primarily used as a precursor in the production of silicon-containing materials, such as silicone rubber, resins, and coatings. BIS(TRICHLOROSILYL)METHANE is also used as an intermediate in the synthesis of other organosilicon compounds and as a reagent in organic chemistry reactions. Due to its reactivity and potential hazards, it should be handled with caution and in accordance with proper safety protocols and regulations.

InChI:InChI=1/CH2Cl6Si2/c2-8(3,4)1-9(5,6)7/h1H2

Synthetic route

tris(trichlorosilyl)methane (4775-56-8) → 1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2)

Conditions	Yield
With hydrogenchloride; tetrabutyl phosphine chloride In dodecane at 20℃; for 1h;	87%

1,2-Dichloroethylene (540-59-0) → dichloromethane (75-09-2) + 1,2-bis(trichlorosilyl)ethane (2504-64-5) + 1,2-bis(trichlorosilyl)ethene (692-52-4) + 1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2)

Conditions	Yield
With hexachlorodisilane at 550℃; for 0.00833333h;	A n/a B n/a C 83% D n/a

3-chloroprop-1-ene (107-05-1) → allyltrichlorosilane (107-37-9) + 1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2) + Phenyltrichlorosilane (98-13-5) + 3-(Dichloro-trichlorosilanylmethyl-silanyl)-propene + 1,1,3,3-tetrachloro-1,3-disilacyclohex-4-ene (59361-35-2)

Conditions	Yield
With hexachlorodisilane at 500℃; for 0.00833333h; Product distribution; Mechanism;	A 81% B 1.85% C 1.77% D 1.52% E 4.63%

bis(dichlorosilyl)methane (18081-42-0) + dichloromethane (75-09-2) → 1,1,3,3,5,5-hexachloro-1,3,5-trisilacyclohexane (16538-69-5) + 1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2) + 1,1,1,3,3,5,5,5-octachloro-1,3,5-trisilapentane (16538-67-3)

Conditions	Yield
tetra-n-butylphosphonium chloride at 180℃; for 2h; Product distribution / selectivity; Inert atmosphere;	A 70.1% B 40.6% C 13%

trichloro(dichloromethyl)silane (1558-24-3) → 1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2)

Conditions	Yield
With tri-n-propylamine; trichlorosilane In acetonitrile for 21h; Ambient temperature;	64%

(chloromethyl)trichlorosilane (1558-25-4) → 1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2)

Conditions	Yield
With tri-n-propylamine; trichlorosilane 1.) r.t., 8 h, 2.) reflux, 10 h;	63.6%
With trichlorosilane; triethylamine In acetonitrile at 65 - 70℃; 12-15 h;	57%
With copper; silicon at 300 - 400℃;
With trichlorosilane; trihexyl(tetradecyl)phosphonium chloride at 50 - 240℃; under 12929 - 33615.5 Torr; for 3.25h;
With tri-n-propylamine; trichlorosilane

chloroform (67-66-3) → 1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2)

Conditions	Yield
With tributylphosphine; trichlorosilane at 150℃; for 2h; Reagent/catalyst; Autoclave;	54.3%
With tributylphosphine; trichlorosilane at 150℃; for 2h; Reagent/catalyst; Autoclave; High pressure; Inert atmosphere;	54.3%
With trichlorosilane at 150℃; for 2h; Reagent/catalyst; Inert atmosphere; Sealed tube;	54.3%

dichloromethane (75-09-2) + (dichlorosilylmethyl)trichlorosilane (18171-02-3) → 1,1,3,3,5,5-hexachloro-1,3,5-trisilacyclohexane (16538-69-5) + 1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2) + 1,1,1,3,3,5,5,5-octachloro-1,3,5-trisilapentane (16538-67-3)

Conditions	Yield
With tetra-n-butylphosphonium chloride In toluene at 180℃; for 3h; Inert atmosphere; Autoclave;	A 54% B 23% C 8%

3-Chloro-2-methylpropene (563-47-3) → trichloro(2-methyl-2-propenyl)silane (18147-56-3) + 1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2) + (Z)-crotyltrichlorosilane (18147-55-2, 52885-13-9, 49749-84-0) + Phenyltrichlorosilane (98-13-5) + 1,1,1,5,5,5-hexachloro-3-methyl-1,5-disila-1-pentene

Conditions	Yield
With hexachlorodisilane at 520℃; for 30h; Product distribution; Mechanism;	A 53.4% B 1.5% C 8.6% D 5.3% E 10.2%

3-Chloro-2-methylpropene (563-47-3) → trichloro(2-methyl-2-propenyl)silane (18147-56-3) + 1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2) + Phenyltrichlorosilane (98-13-5) + 1,1,1,5,5,5-hexachloro-3-methyl-1,5-disila-1-pentene

Conditions	Yield
With hexachlorodisilane at 520℃; for 0.00833333h; Further byproducts given;	A 53.4% B 10.2% C 8.6% D 5.3%
With hexachlorodisilane at 520℃; for 0.00833333h; Further byproducts given;	A 53.4% B 8.6% C 5.3% D 10.2%
With hexachlorodisilane at 520℃; for 0.00833333h; Further byproducts given;	A 53.4% B 10.2% C 5.3% D 8.6%

silicon (7440-21-3) → tetrachlorosilane (10026-04-7, 53609-55-5) + 1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2)

Conditions	Yield
With dichloromethane; copper In neat (no solvent) Si-Cu (4:1) and gaseous CH2Cl2 at 400°C;;	A 53% B n/a
With CH2Cl2; copper In neat (no solvent) Si-Cu (4:1) and gaseous CH2Cl2 at 400°C;;	A 53% B n/a
With dichloromethane; copper In neat (no solvent) Si-Cu (4:1) and gaseous CH2Cl2 at 300-350°C;;
With CH2Cl2; copper In neat (no solvent) Si-Cu (4:1) and gaseous CH2Cl2 at 300-350°C;;

2-propynyl chloride (624-65-7) → allyltrichlorosilane (107-37-9) + 1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2) + trichloro(prop-2-ynyl)silane (33415-29-1) + 1,1,2,2-tetrachloro-1,2-disilacyclopent-4-ene

Conditions	Yield
With hexachlorodisilane at 520℃; for 0.00833333h; Further byproducts given;	A 14.4% B 42.7% C 22.1% D 11.8%

2-propynyl chloride (624-65-7) → 1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2) + trichloro(prop-2-ynyl)silane (33415-29-1) + Phenyltrichlorosilane (98-13-5) + 1,1,2,2-tetrachloro-1,2-disilacyclopent-4-ene

Conditions	Yield
With hexachlorodisilane at 520℃; for 0.00833333h; Further byproducts given;	A 42.7% B 22.1% C 3.8% D 11.8%
With hexachlorodisilane at 450℃; for 0.00694444h; Further byproducts given;	A 35.7% B 17.2% C 14.1% D 21.1%

chloroform (67-66-3) → dichloromethane (75-09-2) + (dichlorosilylmethyl)trichlorosilane (18171-02-3) + 1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2)

Conditions	Yield
With trichlorosilane at 100℃; for 8h;	A 42% B 5% C 42%

2-propynyl chloride (624-65-7) → allyltrichlorosilane (107-37-9) + 1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2) + trichloro(prop-2-ynyl)silane (33415-29-1) + Phenyltrichlorosilane (98-13-5) + 1,1,2,2-tetrachloro-1,2-disilacyclopent-4-ene

Conditions	Yield
With hexachlorodisilane at 450℃; for 0.00694444h; Product distribution; Mechanism; influence of temperature, ratio of reagents;	A 11.6% B 35.7% C 17.2% D 14.1% E 21.1%

chloroform (67-66-3) → 1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2) + tris(trichlorosilyl)methane (4775-56-8)

Conditions	Yield
With hexachlorodisilane at 550℃; for 0.00833333h;	A 30% B 34%
With hexachlorodisilane at 550℃; for 0.00833333h; Product distribution; gas-phase reactions of chloroalkanes and chloroalkenes with Si2Cl6; other temperature, molar concentration of Si2Cl6;

trichloromethyltrichlorosilane (17760-13-3) → 1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2)

Conditions	Yield
With tri-n-propylamine; trichlorosilane In acetonitrile 1.) r.t., 18 h, 2.) reflux, 16 h;	22.7%

Methyltrichlorosilane (75-79-6) → 1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2)

Conditions	Yield
With aluminium trichloride at 450℃; unter Druck;
at 710℃; unter vermindertem Druck;

dichloromethane (75-09-2) → 1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2)

Conditions	Yield
With copper; silicon at 300 - 400℃;
With hexachlorodisilane at 620℃;
With tetrachlorosilane; hydrogen at 300 - 750℃; Catalytic behavior; Flow reactor;
With copper; silicon at 300℃;

1,1,3,3-tetrachloro-2,4-bis-trichlorosilanyl-[1,3]disiletane (18038-59-0) → 1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2)

Conditions	Yield
With hydrogenchloride; N,N-dimethyl-aniline at 150℃;

C19H17Cl3Si2 → 1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2)

Conditions	Yield
With hydrogenchloride; aluminium trichloride In benzene at 5 - 15℃; Yield given;

dichloromethane (75-09-2) → chloroform (67-66-3) + (chloromethyl)trichlorosilane (1558-25-4) + 1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2)

Conditions	Yield
With hexachlorodisilane at 399℃; Product distribution; var. temp. and molar ratio;

dichloromethane (75-09-2) → bis(dichlorosilyl)methane (18081-42-0) + (dichlorosilylmethyl)trichlorosilane (18171-02-3) + 1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2)

Conditions	Yield
With hydrogenchloride; silicon; Cu(10 percent)-Cd(0.5 percent) at 280℃; for 2h;	A 10.1 g B 8.7 g C 2.0 g
With hydrogenchloride; silicon; Cu(10 percent)-Cd(0.5 percent) at 280℃; for 2h; Product distribution; effects of temperature, mixing ratio and further catalysts investigated;	A 10.2 g B 8.7 g C 2.0 g
With hydrogenchloride; methylene chloride; copper; cadmium; silicon at 280℃; for 2h;	A 10.1 g B 8.7 g C 2 g

dichloromethane (75-09-2) + silicon + copper → 1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2)

Conditions	Yield
at 300 - 400℃;

trichloro(dichloromethyl)silane (1558-24-3) + copper silicon-alloy → Methyltrichlorosilane (75-79-6) + tetrachlorosilane (10026-04-7, 53609-55-5) + (chloromethyl)trichlorosilane (1558-25-4) + 1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2)

Conditions	Yield
at 360℃;

(chloromethyl)trichlorosilane (1558-25-4) + silicon-copper → Methyltrichlorosilane (75-79-6) + 1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2) + 1,1,1,3,3,5,5,5-octachloro-1,3,5-trisilapentane (16538-67-3)

Conditions	Yield
at 300 - 370℃;

hexa-Si-chloro-Si,Si'-chloromethanediyl-bis-silane (18157-13-6) + copper silicon-alloy → tetrachlorosilane (10026-04-7, 53609-55-5) + 1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2) + tris(trichlorosilyl)methane (4775-56-8) + 1,1,2,2-tetrakis-trichlorosilanyl-ethane (18105-80-1)

Conditions	Yield
at 360℃;

chloroform (67-66-3) + silicon-copper → tetrachlorosilane (10026-04-7, 53609-55-5) + 1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2) + tris(trichlorosilyl)methane (4775-56-8) + trichlorosilane (10025-78-2)

Conditions	Yield
at 300℃;

trichloromethyltrichlorosilane (17760-13-3) → CH2Cl4Si + chloroform (67-66-3) + trichloro(dichloromethyl)silane (1558-24-3) + 1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2)

Conditions	Yield
With trichlorosilane; tetrabutyl phosphine chloride In dodecane at 60℃; for 8h; Product distribution; Further Variations:; Temperatures;

octadec-1-ene (112-88-9) + 1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2) → 1,1,1,3,3-pentachloro-1,3-disilaheneicosane (1621184-16-4)

Conditions	Yield
Stage #1: 1,1,1,3,3,3-hexachloro-1,3-disilapropane With trihexyl(tetradecyl)phosphonium chloride; Dichloromethylsilane at 80 - 90℃; Inert atmosphere; Autoclave; Stage #2: octadec-1-ene With dihydrogen hexachloroplatinate In tetrahydrofuran at 90 - 110℃; Inert atmosphere;	91%

1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2) → disilylmethane (1759-88-2)

Conditions	Yield
With lithium aluminium tetrahydride In diethylene glycol dimethyl ether at -78 - 25℃; for 2h; Inert atmosphere;	82%
With dibutyl ether; lithium hydride
With lithium aluminium tetrahydride
With lithium aluminium tetrahydride In various solvent(s) Reduction;

1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2) → Dichloro-bis(trichlorosilyl)methane (18157-09-0)

Conditions	Yield
With chlorine In tetrachloromethane for 64h; Heating; Irradiation;	80.8%
With tetrachloromethane; chlorine Irradiation.UV-Licht;
With chlorine at 240℃; Irradiation.UV-licht;
With sulfuryl dichloride; dibenzoyl peroxide at 240℃; Irradiation.UV-licht;
With chlorine UV-irradiation;

1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2) + allyloxytri(ethylene glycol) monomethyl ether (19685-21-3) → [2-methoxy(triethyleneoxy)propyl]-1,1,1,3,3-pentachloro-1,3-disilapropane (431900-65-1)

Conditions	Yield
Stage #1: 1,1,1,3,3,3-hexachloro-1,3-disilapropane With trihexyl(tetradecyl)phosphonium chloride; Dichloromethylsilane at 80 - 90℃; Inert atmosphere; Autoclave; Stage #2: allyloxytri(ethylene glycol) monomethyl ether With dihydrogen hexachloroplatinate In tetrahydrofuran at 85 - 105℃; Inert atmosphere;	70%

1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2) + lithium hydride → disilylmethane (1759-88-2)

Conditions	Yield
In dibutyl ether	63%

1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2) + ethylamine (75-04-7) → (NEtH)3Si-CH2-Si(NEtH)3

Conditions	Yield
In pentane at -78 - 20℃;	62%

1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2) + 3-Chloro-2-methylpropene (563-47-3) → 1,1,1,3,3,6-hexachloro-5-methyl-1,3-disilahexane (1627573-20-9)

Conditions	Yield
Stage #1: 1,1,1,3,3,3-hexachloro-1,3-disilapropane With trihexyl(tetradecyl)phosphonium chloride; Dichloromethylsilane at 80 - 90℃; for 10h; Inert atmosphere; Autoclave; Stage #2: 3-Chloro-2-methylpropene With dihydrogen hexachloroplatinate In tetrahydrofuran at 110 - 120℃; Inert atmosphere;	60%

(dichlorosilylmethyl)trichlorosilane (18171-02-3) + 1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2) + 3-Chloro-2-methylpropene (563-47-3) → 1,1,1,3,3,6-hexachloro-5-methyl-1,3-disilahexane (1627573-20-9)

Conditions	Yield
With hexachloroplatinic acid In tetrahydrofuran at 110 - 130℃; for 3h;	60%

1-Decene (872-05-9) + 1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2) → 1,1,1,3,3-pentachloro-1,3-disilatridecane (1621184-14-2)

Conditions	Yield
Stage #1: 1,1,1,3,3,3-hexachloro-1,3-disilapropane With trihexyl(tetradecyl)phosphonium chloride; Dichloromethylsilane at 80 - 90℃; for 10h; Inert atmosphere; Autoclave; Large scale; Stage #2: 1-Decene With dihydrogen hexachloroplatinate In tetrahydrofuran at 90 - 110℃; Inert atmosphere; Large scale;	59%

1-Decene (872-05-9) + (dichlorosilylmethyl)trichlorosilane (18171-02-3) + 1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2) → 1,1,1,3,3-pentachloro-1,3-disilatridecane (1621184-14-2)

Conditions	Yield
With hexachloroplatinic acid In tetrahydrofuran at 90 - 110℃; for 1.5h; Inert atmosphere;	59%

sodium dicarbonyl(cyclopentadienyl)ferrate + 1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2) → [dicarbonyl(η5-cyclopentadienyl)ferrio]dichlorosilyl-(trichlorosilyl)methane (545443-52-5)

Conditions	Yield
In cyclohexane suspn. of Fe-complex in cyclohexane was combined with Si-compound, stirred for 14 h at ambient temp. under exclusion of light; filtered, solvent was removed in vac., washed with n-pentane at -78°C, dried in vac., crystd. from petroleum ether at -78°C; elem.anal.;	46%

1,1,1,3,3,3-hexachloro-1,3-disilapropane (4142-85-2) + methylamine (74-89-5) → {Bis-methylamino-[(tris-methylamino-silanyl)-methyl]-silanyl}-methyl-amine

Conditions	Yield
In pentane at -78 - 20℃;	41%

Upstream product

• 75-09-2 dichloromethane 
• 1558-25-4 (chloromethyl)trichlorosilane 
• 18038-59-0 1,1,3,3-tetrachloro-2,4-bis-trichlorosilanyl-[1,3]disiletane 
• 1558-24-3 trichloro(dichloromethyl)silane 
• 17760-13-3 trichloromethyltrichlorosilane 
• 540-59-0 1,2-Dichloroethylene 
• 67-66-3 chloroform 
• 563-47-3 3-Chloro-2-methylpropene 
• 18157-13-6 hexa-Si-chloro-Si,Si'-chloromethanediyl-bis-silane 
• 4775-56-8 tris(trichlorosilyl)methane 
• 56-23-5 tetrachloromethane 
• 7440-21-3 silicon 
• 10026-04-7 tetrachlorosilane 
• 1333-74-0 hydrogen 

Downstream Products

• 2117-28-4 bis(trimethylsilyl)methane 
• 18418-72-9 1,1,1,3,3,3-hexaethoxy-1,3-disilapropane 
• 5357-38-0 bis(chlorodimethylsilyl)methane 
• 18105-27-6 methyl(dichlorosilyl)(trichlorosilyl)methane 
• 1759-88-2 disilylmethane 
• 18157-13-6 hexa-Si-chloro-Si,Si'-chloromethanediyl-bis-silane 
• 18157-09-0 Dichloro-bis(trichlorosilyl)methane 
• 18862-07-2 bis-(tris-benzyloxy-silanyl)-methane 
• 18825-73-5 bis-(tris-cyclohexyloxy-silanyl)-methane 
• 18859-00-2 bis-triphenoxysilanyl-methane 
• 26799-07-5 Bis(phenylsilyl)methane 
• 4667-99-6 chlorotriethoxysilane 
• 18027-71-9 ((dimethyl(phenyl)silyl)methyl)trimethylsilane 
• 1627573-20-9 1,1,1,3,3,6-hexachloro-5-methyl-1,3-disilahexane 

Relevant articles and documents

Process for Preparing Polysilylalkane

Polysilylalkane according to the present invention is represented by following formula. The present invention has an advantage that bis(silyl)alkanes or tri(silyl)alkanes can be manufactured in a high yield by dehydrochlorination with a small amount of catalyst by using a silane compound having a dichloro organic matter or a dichloromethyl group.COPYRIGHT KIPO 2020

Process for Preparing Polysilylalkane

According to the present invention, polysilylalkane is represented by chemical formula 3. In chemical formula 3, m is equal to n, and n is equal to zero; and R^3 is a chloromethyl group. In the case of R^4 is H, -SiMe_2Cl, -SiMe_3, -SiMeCl_2, and -SiCl_3, R^3 is equal to -SiCl_3. In the case of R^4 is H, and R^5 is equal to R^6 and R^6 is equal to Me, or R^5 is equal to Me and R^6 is equal to Et, R^3 is -SiCl_3. In the case of R^4 is H, R^5 is equal to -CH_2SiCl_3, and R^6 is Me, R^3 is equal to -SiCl_3. In the case of R^4 is H, R^5 is equal to R^6 and R^6 is equal to -CH_2SiCl_3, R^3 is equal to Et, SiMe_2Cl, -SiMeCl_2, and -SiCl_3, and m is an integer of zero to nine. The manufacturing method is capable of manufacturing bis(silyl)alkane or tri(silyl)alkane in a high yield with a small amount of a catalyst.COPYRIGHT KIPO 2016

Process for Preparing Polysilylalkane

A polysilyalkane according to the present invention is presented by a formula. Here, m=n=0, R^3 is chloro, and methyl group; when R^4 is H, -SiMe_2Cl, -SiMe_3,-SiMeCl_2, -SiCl_3, R^3=-SiCl_3; R^4 is H, R^5=R^6=Me or R^5=Me, when R6=Et, R^3-SiCl_3; R^4 is H, R^5= -CH_2SiCl_3, when R^6 is Me, R^3=-SiCl_3; R^4 is H, when R5=R6=-CH_2SiCl_3, R^3=Et, SiMe_2Cl, -SiMeCl_2, -SiCl_3, and m is integer number of 0-9.COPYRIGHT KIPO 2015