557-07-3Relevant articles and documents
Scalable Synthesis of InAs Quantum Dots Mediated through Indium Redox Chemistry
Ginterseder, Matthias,Franke, Daniel,Perkinson, Collin F.,Wang, Lili,Hansen, Eric C.,Bawendi, Moungi G.
supporting information, p. 4088 - 4092 (2020/03/04)
Next-generation optoelectronic applications centered in the near-infrared (NIR) and short-wave infrared (SWIR) wavelength regimes require high-quality materials. Among these materials, colloidal InAs quantum dots (QDs) stand out as an infrared-active candidate material for biological imaging, lighting, and sensing applications. Despite significant development of their optical properties, the synthesis of InAs QDs still routinely relies on hazardous, commercially unavailable precursors. Herein, we describe a straightforward single hot injection procedure revolving around In(I)Cl as the key precursor. Acting as a simultaneous reducing agent and In source, In(I)Cl smoothly reacts with a tris(amino)arsenic precursor to yield colloidal InAs quantitatively and at gram scale. Tuning the reaction temperature produces InAs cores with a first excitonic absorption feature in the range of 700-1400 nm. A dynamic disproportionation equilibrium between In(I), In metal, and In(III) opens up additional flexibility in precursor selection. CdSe shell growth on the produced cores enhances their optical properties, furnishing particles with center emission wavelengths between 1000 and 1500 nm and narrow photoluminescence full-width at half-maximum (FWHM) of about 120 meV throughout. The simplicity, scalability, and tunability of the disclosed precursor platform are anticipated to inspire further research on In-based colloidal QDs.
Multistage Microfluidic Platform for the Continuous Synthesis of III–V Core/Shell Quantum Dots
Baek, Jinyoung,Shen, Yi,Lignos, Ioannis,Bawendi, Moungi G.,Jensen, Klavs F.
supporting information, p. 10915 - 10918 (2018/08/01)
We present a fully continuous chip microreactor-based multistage platform for the synthesis of quantum dots with heterostructures. The use of custom-designed chip reactors enables precise control of heating profiles and flow distribution across the microfluidic channels while conducting multistep reactions. The platform can be easily reconfigured by reconnecting the differently designed chip reactors allowing for screening of various reaction parameters during the synthesis of nanocrystals. III–V core/shell quantum dots are chosen as model reaction systems, including InP/ZnS, InP/ZnSe, InP/CdS and InAs/InP, which are prepared in flow using a maximum of six chip reactors in series.
Flexible quantum dot light emitting diodes based on ZnO nanoparticles
Pan, Jiangyong,Chen, Jing,Huang, Qianqian,Khan, Qasim,Liu, Xiang,Tao, Zhi,Lei, Wei,Xu, Feng,Zhang, Zichen
, p. 82192 - 82198 (2015/10/12)
Flexible quantum dot light emitting diodes (QLEDs) have attracted extensive attention owing to the advantages of foldability and their broad application in flexible display devices. In this work, we report high performance, mechanically flexible QLEDs based on ZnO nanoparticles used as an electron transfer layer (ETL). The QLEDs have been fabricated on poly(ethylene-terephthalate) (PET) substrates utilizing a unique structure consisting of bilayered hole transport films and ZnO nanoparticles acting as an ETL to improve the device performance owing to its appropriate energy band position and high charge mobility. The QLEDs exhibited high performance, such as a lowered turn on voltage of 1.6 V and improved current and power efficiencies of 5.20 cd A-1 and 1.80 lm W-1, respectively. They presented good flexibility with a critical bending radius of 4.5 mm, suggesting the broad application potential of flexible QLEDs.
