7529-27-3Relevant articles and documents
NOVEL TETRACARBOXYLIC DIANHYDRIDE, POLYIMIDE RESIN AND METHOD FOR PRODUCING THE SAME, PHOTOSENSITIVE RESIN COMPOSITIONS, PATTERNING PROCESS, METHOD FOR FORMING CURED FILM, INTERLAYER INSULATING FILM, SURFACE PROTECTIVE FILM, AND ELECTRONIC PARTS
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Paragraph 0279, (2019/06/17)
The present invention has been made in view of the circumstances herein. An object of the present invention is to provide: a tetracarboxylic dianhydride which can lead to a polyimide usable as a base resin of a photosensitive resin composition capable of forming a fine pattern and obtaining high resolution without impairing excellent characteristics such as mechanical strength and adhesiveness; a polyimide resin obtained by using the tetracarboxylic dianhydride; and a method for producing the polyimide resin. The tetracarboxylic dianhydride is shown by the following general formula (1).
Printable cross-linked polymer blend dielectrics. Design strategies, synthesis, microstructures, and electrical properties, with organic field-effect transistors as testbeds
Kim, Choongik,Wang, Zhiming,Choi, Hyuk-Jin,Ha, Young-Geun,Facchetti, Antonio,Marks, Tobin J.
, p. 6867 - 6878 (2008/12/23)
We report here the synthesis and dielectric properties of optimized, cross-linked polymer blend (CPB) dielectrics for application in organic field-effect transistors (OFETs). Novel silane cross-linking reagents enable the synthesis of CPB films having excellent quality and tunable thickness (from 10 to ~500 nm), fabricated both by spin-coating and gravure-printing. Silane reagents of the formula X3Si-R-SiX3 (R = -C 6H12- and X = Cl, OAc, NMe2, OMe, or R = -C2H4-O-C2H4- and X = OAc) exhibit tunable reactivity with hydroxyl-containing substrates. Dielectric films fabricated by blending X3Si-R-SiX3 with poly(4-vinyl)phenol (PVP) require very low-curing temperatures (~110°C) and adhere tenaciously to a variety of FET gate contact materials such as n +-Si, ITO, and Al. The CPB dielectrics exhibit excellent insulating properties (leakage current densities of 10-7 ~ 10-8 A cm-2 at 2.0 MV/cm) and tunable capacitance values (from 5 to ~350 nF cm-2). CPB film quality is correlated with the PVP-cross-linking reagent reactivity. OFETs are fabricated with both p- and n-type organic semiconductors using the CPB dielectrics function at low operating voltages. The morphology and microstructure of representative semiconductor films grown on the CPB dielectrics is also investigated and is correlated with OFET device performance.
Crosslinking agent based on linear hydroxypolyallyl ether
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, (2008/06/13)
An allyl type crosslinking agent for use in production of a super water-absorbent polymer comprising a polymerizable compound having a carbon-carbon double bond or a salt thereof, comprising a linear hydroxypolyallyl ether having at least one hydroxyl groups and at least two allyl groups obtained by allyletherification of hydroxyl groups in a linear polyol compound selected from the group consisting of erythritol, xylitol and sorbitol, is provided. This allyl type crosslinking agent is highly soluble in an aqueous solvent, and can give an excellent super water-absorbent polymer, which cannot be obtained in the prior arts, having high levels of both of water absorptivity under atmospheric pressure and water absorptivity under pressurized conditions are obtained.