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Tungsten(IV) selenide, also known as tungsten selenide, is a lamellar-structured, dry, solid lubricant with exceptionally high temperature and high vacuum stability. It is a stable semiconductor and retains its lubricity to temperatures as low as -265°C. It is available in the form of 99.8% pure material as a sputtering target to produce lubricant films.

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  • 12067-46-8 Structure
  • Basic information

    1. Product Name: TUNGSTEN SELENIDE
    2. Synonyms: TUNGSTEN DISELENIDE;TUNGSTEN (IV) SELENIDE;TUNGSTEN SELENIDE;TUNGSTEN (IV) SELENIDE, 99.8% (METALS BASIS);Tungsten(Ⅳ) selenide;Tungsten(IV) selenide (WSe2);Tungsten diselenide Crystal, 99.995%;Tungsten(IV) selenide lump
    3. CAS NO:12067-46-8
    4. Molecular Formula: Se2W
    5. Molecular Weight: 341.76
    6. EINECS: 235-078-7
    7. Product Categories: N/A
    8. Mol File: 12067-46-8.mol
  • Chemical Properties

    1. Melting Point: N/A
    2. Boiling Point: °Cat760mmHg
    3. Flash Point: °C
    4. Appearance: /Powder, 10μm
    5. Density: 9.32
    6. Refractive Index: N/A
    7. Storage Temp.: N/A
    8. Solubility: N/A
    9. Water Solubility: Insoluble in water.
    10. CAS DataBase Reference: TUNGSTEN SELENIDE(CAS DataBase Reference)
    11. NIST Chemistry Reference: TUNGSTEN SELENIDE(12067-46-8)
    12. EPA Substance Registry System: TUNGSTEN SELENIDE(12067-46-8)
  • Safety Data

    1. Hazard Codes: N/A
    2. Statements: N/A
    3. Safety Statements: N/A
    4. RIDADR: UN3283 - class 6.1 - PG 3 - EHS - Selenium compound, solid, n.o.
    5. WGK Germany:
    6. RTECS: YO7714000
    7. TSCA: Yes
    8. HazardClass: 9
    9. PackingGroup: N/A
    10. Hazardous Substances Data: 12067-46-8(Hazardous Substances Data)

12067-46-8 Usage

Uses

Used in Electrochemical Solar Cells:
Tungsten selenide is used as an important compound in electrochemical solar cells, acting as a stable semiconductor.
Used in High-Temperature Applications:
Tungsten selenide is used as a dry, solid lubricant for its exceptional stability at high temperatures, making it suitable for applications in extreme environments.
Used in High Vacuum Applications:
Tungsten selenide is used as a lubricant in high vacuum applications due to its high vacuum stability, ensuring consistent performance in low-pressure conditions.
Used in Lubricant Films Production:
Tungsten selenide is used as a sputtering target to produce lubricant films, providing a high-quality and durable coating for various industrial applications.

Hazard

TLV: 5 mg(W)/m3.

Check Digit Verification of cas no

The CAS Registry Mumber 12067-46-8 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,2,0,6 and 7 respectively; the second part has 2 digits, 4 and 6 respectively.
Calculate Digit Verification of CAS Registry Number 12067-46:
(7*1)+(6*2)+(5*0)+(4*6)+(3*7)+(2*4)+(1*6)=78
78 % 10 = 8
So 12067-46-8 is a valid CAS Registry Number.
InChI:InChI=1/2Se.W/rSe2W/c1-3-2

12067-46-8 Well-known Company Product Price

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  • Alfa Aesar

  • (13084)  Tungsten(IV) selenide, 99.8% (metals basis)   

  • 12067-46-8

  • 10g

  • 789.0CNY

  • Detail
  • Alfa Aesar

  • (13084)  Tungsten(IV) selenide, 99.8% (metals basis)   

  • 12067-46-8

  • 50g

  • 2892.0CNY

  • Detail
  • Aldrich

  • (808822)  Tungsten diselenide  Crystal, 99.995%

  • 12067-46-8

  • 808822-1EA

  • 12,682.80CNY

  • Detail

12067-46-8SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 18, 2017

Revision Date: Aug 18, 2017

1.Identification

1.1 GHS Product identifier

Product name TUNGSTEN SELENIDE

1.2 Other means of identification

Product number -
Other names Tungsten(IV) selenide

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:12067-46-8 SDS

12067-46-8Downstream Products

12067-46-8Related news

Use of modified TUNGSTEN SELENIDE (cas 12067-46-8) as an adsorbent for gas chromatography07/31/2019

Tungsten selenide (WSe2) is a crystalline adsorbent with a lamellar structure. In order to remove the residual non-homogeneity of the tungsten selenide surface, samples were subjected to adsorption modification with small amounts of liquid phases of different polarities [poly(ethylene glycol) 15...detailed

Synthesis and hydrogen-evolution activity of TUNGSTEN SELENIDE (cas 12067-46-8) thin films deposited on tungsten foils07/30/2019

Thin films of WSe2 have been deposited onto a conductive substrate (tungsten foil) using a relatively simple chemical-vapor-transport technique. X-ray photoelectron spectroscopy, energy-dispersive X-ray spectroscopy, X-ray powder diffraction, scanning electron microscopy, and high-resolution tra...detailed

12067-46-8Relevant articles and documents

Effect of Long-Range and Local Order of Exfoliated and Proton-Beam-irradiated WSe2 Nanosheets for Sodium Ion Battery Application

Chun, Yu-Gyeong,Lee, Won-Jae,Lee, Minseop,Paek, Seung-Min

, p. 665 - 670 (2018)

WSe2 nanosheets were synthesized by mechanical exfoliation via sonication of bulk WSe2 in organic solvent. The exfoliated WSe2 nanosheets were separated into two different particle size ranges, and were then irradiated by

Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser-Assisted Reaction

Kim, Eunpa,Ko, Changhyun,Kim, Kyunghoon,Chen, Yabin,Suh, Joonki,Ryu, Sang-Gil,Wu, Kedi,Meng, Xiuqing,Suslu, Aslihan,Tongay, Sefaattin,Wu, Junqiao,Grigoropoulos, Costas P.

, p. 341 - 346 (2016)

Laser-assisted phosphorus doping is demonstrated on ultrathin transition-metal dichalcogenides (TMDCs) including n-type MoS2 and p-type WSe2. Temporal and spatial control of the doping is achieved by varying the laser irradiation power and time, demonstrating wide tunability and high site selectivity with high stability. The laser-assisted doping method may enable a new avenue for functionalizing TMDCs for customized nanodevice applications.

Morphological characteristics in polycrystalline tungsten diselenide regulating transport properties lead to predominant thermoelectric performance

Kim, Cham,Baek, Ju Young,Kim, Dong Hwan,Kim, Jong Tae,Lopez, David Humberto,Kim, Taewook,Kim, Hoyoung

, p. 183 - 189 (2017)

We studied a polycrystalline p-type WSe2 semiconductor for thermoelectric applications. The polycrystalline WSe2 nanocompound was prepared via a thermal reaction process of tungsten and selenium elements and it was sintered to produce a bulk structure using spark plasma sintering equipment. The resulting bulk specimen showed different morphological aspects, in which we observed irregularly-shaped grains along the direction perpendicular to the sintering pressing direction (i.e., along transversal direction) while finding thin layers along the parallel direction (i.e., along longitudinal direction). The specimen recorded a significantly low longitudinal thermal conductivity possibly because longitudinal phonon transport should be hindered due to the thin layers. Electron transport along the longitudinal direction might not be greatly interrupted by the morphological characteristics because the specimen recorded high carrier mobility along the direction resulting in lower electrical resistivity than that of a single crystalline equivalent. The specimen also showed moderate carrier concentration, which led to a plausible Seebeck coefficient. Since the specimen exhibited the significantly low thermal conductivity with the electrical properties, it recorded a higher figure of merit than the equivalent, which is the highest thermoelectric performance for p-type WSe2 in bulk phase ever developed.

In-plane thermal conductivity of disordered layered W Se2 and (W)x (W Se2) y superlattice films

Mavrokefalos, Anastassios,Nguyen, Ngoc T.,Pettes, Michael T.,Johnson, David C.,Shi, Li

, (2007)

It was recently reported that misoriented layered W Se2 and (W)x (W Se2) y films possess extremely low cross-plane thermal conductivity. Here, we report that the in-plane thermal conductivity results for W Se2 and W4 (W Se2) 10 films measured by using a suspended device are about 30 times higher than the cross-plane values because of the in-plane ordered and cross-plane disordered structures and about six times lower than that of compacted single-crystal W Se2 platelets. The additional W layers in the W4 (W Se2) 10 films were found to greatly increase the in-plane electrical conductivity relative to the W Se2 films, but reduce the in-plane lattice thermal conductivity assuming the Wiedemann-Franz law.

A 3D dendritic WSe2 catalyst grown on carbon nanofiber mats for efficient hydrogen evolution

Zou, Meiling,Zhang, Junfeng,Zhu, Han,Du, Mingliang,Wang, Qingfa,Zhang, Ming,Zhang, Xiangwen

, p. 12149 - 12153 (2015)

3D dendritic WSe2 on conductive carbon nanofiber mats (d-WSe2/CFM) was designed and synthesized by a diffusion-controlled CVD method. The d-WSe2/CFM was directly used as a cathode for the HER. The substantially improved HER performance is ascribed to the novel 3D structure with effectively exposed edge sites.

Synthesis, crystal structure and physical properties of a novel quaternary selenide Cu6GeWSe8

Chen, Genfu,Gu, Yadong,Ren, Zhian,Ruan, Binbin,Yang, Qingsong,Zhou, Menghu

, (2021)

Here we report a novel quaternary selenide Cu6GeWSe8 synthesized directly from the constituent elements, which forms within the temperature range from 460 to 620 ?°C. It crystallizes in the space group P63mc with two formula units in the cell of dimensions a ?= ?7.8651 (5) ?, c ?= ?12.9275 (6) ?. In the unit cell composed of MSe4 (M ?= ?Cu, Ge and W) tetrahedrons, Cu atoms occupy two sets of 6c Wyckoff positions, Ge and W atoms respectively occupy 2a and 2b positions, while Se atoms are located at four inequivalent sites, respectively 2b (Se1), 6c (Se2), 6c (Se3) and 2a (Se4). The electrical resistivity and Vis-Nir absorption spectrum indicate that the compound exhibits a semiconducting behavior with an optical band gap of 1.586 ?eV Cu6GeWSe8 shows diamagnetism at room temperature and the emergence of a Curie-Weiss-like tail at low temperature. The band structure calculation demonstrates that the title compound has a direct band gap, and Cu and Se atoms dominantly contribute to the energy bands and density of states. Cu is mostly in 3d10 state (+1 valence) and Se in 4p6 state (?2 valence). On the basis of the experimental and calculation results, it is concluded that Cu6GeWSe8 is a diamagnetic direct-gap semiconductor.

ELECTRODEPOSITED TUNGSTEN SELENIDE FILMS.

Chandra,Srivastava,Sahu

, p. 497 - 503 (1985)

There is interest in developing inexpensive techniques for preparing large-area polycrystalline semiconductor thin films, particularly for applications in photoelectrochemical solar cells (PESC). An electrodeposition method for obtaining tungsten selenide films on a titanium substrate is described for the first time. An induced co-deposition mechanism is suggested. The first deposit is always Se which is followed by increasing W de position. Structural characterization was carried out by EDAX, TEM, and SEM studies.

Solution-phase synthesis of highly conductive tungsten diselenide nanosheets

Antunez, Priscilla D.,Webber, David H.,Brutchey, Richard L.

, p. 2385 - 2387 (2013)

A high-yielding synthesis of colloidal 2H-WSe2 (tungsten diselenide) nanosheets was reported, which were shown to be phase pure by x-ray diffraction (XRD). The synthesis of WSe2 nanosheets was achieved by the injection of 185 μL ditert-butyl diselenide (tBu2Se2) into a solution of 150 mg WCl4 in 25 mL of dodecylamine at 150°C under nitrogen. The solution was then heated to 225°C and held at this temperature for 6 h prior to quenching. Tetra-noctylammonium bromide (TOAB) was added during the workup to prevent agglomeration of the nanosheets. The final washed product was highly dispersible in tetramethylurea (TMU) and 1,2-dichlorobenzene, forming colloidal suspensions that were stable over the course of several months. Preferential sheet alignment along the direction upon solution casting was reflected in the XRD pattern and the correspondingly high conductivity values of the resulting thin films.

Graphene analogues of layered metal selenides

Matte, H. S. S. Ramakrishna,Plowman, Blake,Datta, Ranjan,Rao

, p. 10322 - 10325 (2011)

Graphene analogues of MoSe2 and WSe2 have been prepared by three different chemical methods and characterized by electron microscopy and other methods. Graphene analogues of these diselenides as well as of GaSe have also been obtained by liquid-phase exfoliation. Raman spectra of the graphene analogues show significant changes relative to those of the bulk samples.

Standard molar enthalpy of formation by fluorine-combustion calorimetry of tungsten diselenide (WSe2). Thermodynamics of the high-temperature vaporization of WSe2. Revised value of the standard molar enthalpy of formation of molybdenite (MoS2)

O'Hare, P. A. G.,Lewis, Brett M.,Parkinson, B. A.

, p. 681 - 692 (1988)

A high-purity sample of WSe2, containing in total mass fraction less than 1 x 10-4 of oxygen and other impurities, has been synthesized by combination of the elements.The standard specific energy of combustion of pure WSe2 in fluorine, as measured by high-precision calorimetry, is -(10993.7+/-15.0) J*g-1, and the derived standard molar enthalpy of formation ΔfHm0 is -(185.3+/-5.5) kJ*mol-1 at T = 298.15 K and p0 = 0.101325 MPa.This result is compared with other literature values, and the equilibrium partial pressures of Se2(g) and Se(g) are estimated for decomposition of WSe2 to and 1/2WSe2 to .Our published result (J.Chem.Thermodynamics 1970, 2, 797) for ΔfHm0(MoS2) at 298.15 K has been revised to -(271.8+/-4.9) kJ*mol-1.

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