- Driving Force Dependence of Electron Transfer from Electronically Excited [Ir(COD)(μ-Me2pz)]2 to Photo-Acid Generators
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We report the rates of electron transfer (ET) reactions of electronically excited [Ir(COD)(μ-Me2pz)]2 with onium salt photoacid generators (PAGs). The reduction potentials of the PAGs span a large electrochemical window that allows determination of the driving force dependence of the ET reactions. Rate constants of ET from electronically excited [Ir(COD)(μ-Me2pz)]2 to onium PAGs are determined by the reaction driving force until the diffusion limit in acetonitrile is reached.
- Sattler, Wesley,Rachford, Aaron A.,LaBeaume, Paul J.,Coley, Suzanne M.,Thackeray, James W.,Cameron, James F.,Müller, Astrid M.,Winkler, Jay R.,Gray, Harry B.
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- Preparation method of triphenyl sulfur perfluorobutane sulfonic acid sulfonium salt
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The invention relates to a preparation method of triphenyl sulfur perfluorobutane sulfonic acid sulfonium salt. The method comprises the following steps: (1) taking triphenyl sulfur bromide and sodium perfluorobutane sulfonate as raw materials, dissolving the raw materials in a composite solvent, and after the reaction is completed, separating to obtain a triphenyl sulfur perfluorobutane sulfonic acid sulfonium salt crude product; and (2) recrystallizing the triphenyl sulfur perfluorobutane sulfonium salt crude product obtained in the step (1) in a recrystallization solvent to obtain the triphenyl sulfur perfluorobutane sulfonium salt. According to the invention, the purity of the product is greater than or equal to 99%, and the reaction yield is greater than or equal to 81%; and the process route disclosed by the invention is simple and feasible in operation process and mild in reaction condition.
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Paragraph 0014; 0032-0056
(2021/07/28)
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- Photoacid generator for 193 nm immersion lithography and intermediate thereof
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The invention discloses a photoacid generator for 193 nm immersed lithography and an intermediate thereof. The photoacid generator of the present invention is shown in Formula I. The photoresist containing the photoacid generator of the present invention has a high resolution. The method has the advantages of high sensitivity and low line width roughness, and has a good application prospect.
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Paragraph 0101; 0109; 0112-0113; 0132-0134
(2021/11/27)
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- Multi-onium salt type photoacid generator for ArF light source dry photoetching
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The invention discloses a multi-onium salt type photoacid generator for ArF light source dry photoetching. The photoacid generator is an onium salt having anions and onium ions, wherein the anions have a structure represented by a formula (I), the onium ions have a structure represented by a formula (A) or a formula (B), and the number of the onium ions enables the charge of the onium salt to maintain neutral. The photoresist containing the onium salt provided by the invention has better resolution, sensitivity and line width roughness.
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Paragraph 0107-0109; 0119-0121; 0139-0141
(2022/01/05)
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- Radiation-sensitive resin composition and radiation-sensitive acid generating agent
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A radiation-sensitive resin composition includes a compound represented by a formula (1), and a base polymer. A represents —CO— or —CH2—. R1 represents a hydrocarbon group having 1 to 30 carbon atoms, a heterocyclic group having 3 to 30 ring atoms, or a combination of a first group and a second group. The first group is —CO—, —COO—, —OCO—, —O—CO—O—, —NHCO—, —CONH—, —NH—CO—O—, —O—CO—NH—, —NH—, —S—, —SO—, —SO2—, —SO2—O— or a combination thereof, and the second group is a hydrocarbon group having 1 to 30 carbon atoms, a heterocyclic group having 3 to 30 ring atoms or a combination thereof. A part or all of hydrogen atoms included in the hydrocarbon group and the heterocyclic group are not substituted or substituted. M+ represents a monovalent cation.
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- RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING A RESIST PATTERN, COMPOUND, AND POLYMER
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A radiation-sensitive resin composition includes a first polymer that includes a repeating unit having an acid-labile group and becomes alkali-soluble upon dissociation of the acid-labile group, and a radiation-sensitive acid-generating agent. The acid-labile group has a structure shown by a general formula (1). R1 represents a methyl group or the like, R2 represents a hydrocarbon group that forms a cyclic structure, R3 represents a fluorine atom or the like, R4 represents a carbon atom, and n1 is an integer from 1 to 7.
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- Resist composition and patterning process
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The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.
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- POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS
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A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising recurring units containing a non-leaving hydroxyl group represented by formula (1) wherein R1 is H, methyl or trifluoromethyl, X is a single bond or methylene, m is 1 or 2, and the hydroxyl group attaches to a secondary carbon atom. The composition is improved in resolution when processed by lithography.
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- Sulfonates, polymers, resist compositions and patterning process
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A sulfonate compound having formula (1) is novel wherein R1 to R3 are H, F or C1-20 alkyl or fluoroalkyl, at least one of R1 to R3 contains F. A polymer comprising units derived from the sulfonate compound is used as a base resin to formulate a resist composition which is sensitive to high-energy radiation, maintains high transparency at a wavelength of up to 200 nm, and has improved alkali dissolution contrast and plasma etching resistance
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- Novel tertiary (meth)acrylates having lactone structure, polymers, resist compositions and patterning process
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Novel tertiary (meth)acrylate compounds having a lactone structure are polymerizable into polymers having improved transparency, especially at the exposure wavelength of an excimer laser and dry etching resistance. Resist compositions comprising the polymers are sensitive to high-energy radiation, have a high resolution, and lend themselves to micropatterning with electron beams or deep-UV rays.
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- Novel anthracene derivative and radiation-sensitive resin composition
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A novel anthracene derivative useful as an additive to a radiation-sensitive resin composition is disclosed. The anthracene derivative has the following formula (1), wherein R1 groups individually represent a hydroxyl group or a monovalent organic group having 1-20 carbon atoms, n is an integer of 0-9, X is a single bond or a divalent organic group having 1-12 carbon atoms, and R2 represents a monovalent acid-dissociable group. The radiation-sensitive resin composition comprises the anthracene derivative of the formula (1), a resin insoluble or scarcely soluble in alkali, but becomes alkali soluble in the presence of an acid, and a photoacid generator. The composition is useful as a chemically-amplified resist for microfabrication utilizing deep ultraviolet rays, typified by a KrF excimer laser and ArF excimer laser.
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- Novel carbazole derivative and chemically amplified radiation-sensitive resin composition
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A carbazole derivative of the following formula (1), wherein R1 and R2 individually represent a hydrogen atom or a monovalent organic group, or R1 and R2 form, together with the carbon atom to which R1 and R2 bond, a divalent organic group having a 3-8 member carbocyclic structure or a 3-8 member heterocyclic structure, and R3 represents a hydrogen atom or a monovalent organic group. The carbazole derivative is suitable as an additive for increasing sensitivity of a chemically amplified resist. A chemically amplified radiation-sensitive resin composition, useful as a chemically amplified resist, comprising the carbazole derivative is also disclosed.
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- Chemical amplification type positive resist compositions and sulfonium salts
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A chemical amplifying type positive resist composition having high transmittance, superior in sensitivity and resolution in a lithography utilizing a light having a wavelength of 220 nm or lower and confering a good profile is provided, Which comprisesan
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- Chemical amplification type positive resist
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A chemical amplification type positive resist composition which is good in resolution, provide a good pattern profile under exposure using light of wavelength of 220 nm or shorter even when applied on a basic substrate or a low reflectance substrate and which comprises an acid generator comprising an aliphatic sulfonium salt represented by the following formula (I): wherein Q1 represents an alkyl group, Q2 represents an alkyl group or a residue of an alicyclic hydrocarbon and m represents an integer of 1 to 8; and at least one onium salt selected from triphenylsulfonium salts represented by the following formula (IIa) and diphenyiodonium salts represented by the following formula (IIb): wherein Q3, Q4, Q5, Q6 and Q7 each independently represent a hydrogen atom, a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, and q and p represent a integer of 4 to 8; and (2) a resin which has a polymerization unit with a group unstable to an acid, and is insoluble or barely soluble in alkali by itself but changes to become soluble in alkali by the action of the acid, is provided.
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