144317-44-2

Basic information

• Product Name: Triphenylsulfonium nonaflate
• Synonyms: TriphenylsulfoniuM perfluoro-1-butanesufonate electronic grade, >=99%;TRIPHENYLSULFONIUM PERFLUORO-1-;TRIPHENYLSULFONIUM PERFLUORO-1-BUTANESUL;Triphenyl sulfonium salt with 1,1,2,2,3,3,4,4,4-nonafluoro-1-butanesulfonic acid(1:1);Triphenylsulfonium nonaflate;Triphenylsulfonium perfluoro-1-butanesufonate
• CAS NO: 144317-44-2
• Molecular Formula: C22H15F9O3S2
• Molecular Weight: 562.47
• Product Categories: Cationic PhotoinitiatorsSelf Assembly&Contact Printing;Organic Photoinitiators;Photoacid Generators (PAGs);Photoresists;Polymerization Initiators
• Mol File: 144317-44-2.mol

Chemical Properties

• Melting Point: 84-88 °C(lit.)
• Appearance: /
• Solubility: PGMEA: ~50%
• CAS DataBase Reference: Triphenylsulfonium nonaflate(CAS DataBase Reference)
• NIST Chemistry Reference: Triphenylsulfonium nonaflate(144317-44-2)
• EPA Substance Registry System: Triphenylsulfonium nonaflate(144317-44-2)

Safety Data

• Hazard Codes: Xi
• Statements: 36/37/38
• Safety Statements: 26-36
• WGK Germany: 3
• Hazardous Substances Data: 144317-44-2(Hazardous Substances Data)

Usage

Uses

Cationic photoinitiator. Photoacid generator.

Upstream product

• 3353-89-7 triphenylsulfonium bromide 
• 60453-92-1 sodium 1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate 
• 29420-49-3 potassium nonaflate 

Relevant articles and documents

Driving Force Dependence of Electron Transfer from Electronically Excited [Ir(COD)(μ-Me2pz)]2 to Photo-Acid Generators

We report the rates of electron transfer (ET) reactions of electronically excited [Ir(COD)(μ-Me2pz)]2 with onium salt photoacid generators (PAGs). The reduction potentials of the PAGs span a large electrochemical window that allows determination of the driving force dependence of the ET reactions. Rate constants of ET from electronically excited [Ir(COD)(μ-Me2pz)]2 to onium PAGs are determined by the reaction driving force until the diffusion limit in acetonitrile is reached.

Preparation method of triphenyl sulfur perfluorobutane sulfonic acid sulfonium salt

The invention relates to a preparation method of triphenyl sulfur perfluorobutane sulfonic acid sulfonium salt. The method comprises the following steps: (1) taking triphenyl sulfur bromide and sodium perfluorobutane sulfonate as raw materials, dissolving the raw materials in a composite solvent, and after the reaction is completed, separating to obtain a triphenyl sulfur perfluorobutane sulfonic acid sulfonium salt crude product; and (2) recrystallizing the triphenyl sulfur perfluorobutane sulfonium salt crude product obtained in the step (1) in a recrystallization solvent to obtain the triphenyl sulfur perfluorobutane sulfonium salt. According to the invention, the purity of the product is greater than or equal to 99%, and the reaction yield is greater than or equal to 81%; and the process route disclosed by the invention is simple and feasible in operation process and mild in reaction condition.

Photoacid generator for 193 nm immersion lithography and intermediate thereof

The invention discloses a photoacid generator for 193 nm immersed lithography and an intermediate thereof. The photoacid generator of the present invention is shown in Formula I. The photoresist containing the photoacid generator of the present invention has a high resolution. The method has the advantages of high sensitivity and low line width roughness, and has a good application prospect.

Multi-onium salt type photoacid generator for ArF light source dry photoetching

The invention discloses a multi-onium salt type photoacid generator for ArF light source dry photoetching. The photoacid generator is an onium salt having anions and onium ions, wherein the anions have a structure represented by a formula (I), the onium ions have a structure represented by a formula (A) or a formula (B), and the number of the onium ions enables the charge of the onium salt to maintain neutral. The photoresist containing the onium salt provided by the invention has better resolution, sensitivity and line width roughness.

Radiation-sensitive resin composition and radiation-sensitive acid generating agent

A radiation-sensitive resin composition includes a compound represented by a formula (1), and a base polymer. A represents —CO— or —CH2—. R1 represents a hydrocarbon group having 1 to 30 carbon atoms, a heterocyclic group having 3 to 30 ring atoms, or a combination of a first group and a second group. The first group is —CO—, —COO—, —OCO—, —O—CO—O—, —NHCO—, —CONH—, —NH—CO—O—, —O—CO—NH—, —NH—, —S—, —SO—, —SO2—, —SO2—O— or a combination thereof, and the second group is a hydrocarbon group having 1 to 30 carbon atoms, a heterocyclic group having 3 to 30 ring atoms or a combination thereof. A part or all of hydrogen atoms included in the hydrocarbon group and the heterocyclic group are not substituted or substituted. M+ represents a monovalent cation.

RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING A RESIST PATTERN, COMPOUND, AND POLYMER

A radiation-sensitive resin composition includes a first polymer that includes a repeating unit having an acid-labile group and becomes alkali-soluble upon dissociation of the acid-labile group, and a radiation-sensitive acid-generating agent. The acid-labile group has a structure shown by a general formula (1). R1 represents a methyl group or the like, R2 represents a hydrocarbon group that forms a cyclic structure, R3 represents a fluorine atom or the like, R4 represents a carbon atom, and n1 is an integer from 1 to 7.

Resist composition and patterning process

The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.

POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS

A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising recurring units containing a non-leaving hydroxyl group represented by formula (1) wherein R1 is H, methyl or trifluoromethyl, X is a single bond or methylene, m is 1 or 2, and the hydroxyl group attaches to a secondary carbon atom. The composition is improved in resolution when processed by lithography.

Sulfonates, polymers, resist compositions and patterning process

A sulfonate compound having formula (1) is novel wherein R1 to R3 are H, F or C1-20 alkyl or fluoroalkyl, at least one of R1 to R3 contains F. A polymer comprising units derived from the sulfonate compound is used as a base resin to formulate a resist composition which is sensitive to high-energy radiation, maintains high transparency at a wavelength of up to 200 nm, and has improved alkali dissolution contrast and plasma etching resistance

Novel tertiary (meth)acrylates having lactone structure, polymers, resist compositions and patterning process

Novel tertiary (meth)acrylate compounds having a lactone structure are polymerizable into polymers having improved transparency, especially at the exposure wavelength of an excimer laser and dry etching resistance. Resist compositions comprising the polymers are sensitive to high-energy radiation, have a high resolution, and lend themselves to micropatterning with electron beams or deep-UV rays.